Semiconductor Transfer via Cover Layer and Contact Structures
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Solution Overview
Problem
Current methods for transferring semiconductor bodies are not time-saving and space-efficient, particularly when dealing with layer stacks that generate electromagnetic radiation, as they require complex geometries and direct mechanical contacts that complicate the detachment process.
Innovation Solution
A method involving a semiconductor structure grown on a substrate with a cover layer and transfer structure connected via a contact structure, allowing for detachment by selectively weakening the mechanical connection at the contact points, enabling efficient transfer and minimizing space usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If direct mechanical contact between transfer structure and semiconductor structure is used, then mechanical connection strength is improved, but detachment complexity increases
Solution Approach 1:
The patent introduces a cover layer as an intermediary element between the transfer structure and the semiconductor structure. The transfer structure connects to the cover layer through contact structures, which are mechanically weaker than direct semiconductor-to-transfer-structure connections. This intermediary layer allows strong initial attachment while enabling controlled detachment through the cover layer's sacrificial role, reducing detachment complexity without compromising connection strength.
2Ease of operation
If complex geometry is used for transfer structure, then detachment control is improved, but manufacturing complexity increases
Solution Approach 1:
The transfer structure is segmented into discrete contact structures rather than using a complex continuous geometry. These contact structures are distributed across the cover layer and provide controlled mechanical connection points. This segmentation simplifies manufacturing compared to complex monolithic geometries while maintaining precise detachment control through the distributed contact points that can be selectively broken.
Solution Approach 2:
The patent controls detachment by changing the mechanical parameters of the contact structures rather than relying on complex geometric features. The contact structures are designed with specific material properties and dimensional parameters that create controlled weakness points. By adjusting these parameters (material composition, thickness, geometry of contact structures), precise detachment control is achieved without requiring complex overall transfer structure geometry.
3Reliability
If cover layer completely covers semiconductor structure, then mechanical protection is improved, but space efficiency decreases
Solution Approach 1:
The cover layer is implemented as a thin film structure that completely covers the semiconductor structure, providing comprehensive mechanical protection and a uniform surface for contact structure attachment. This thin film approach delivers full protective coverage while minimizing the added volume, thereby maintaining space efficiency. The cover layer acts as a flexible protective shell that safeguards the semiconductor structure without significantly increasing the overall device footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the efficient transfer of semiconductor bodies while maintaining the integrity of the cover and transfer structures, enabling precise control over the mechanical connection strength and reducing the complexity of detachment, thus improving the time and space efficiency of the process.
Implementation Method 1
The semiconductor structure is produced on the growth substrate by means of an epitaxial process
Implementation Method 2
The cover layer is deposited, for example, by means of chemical vapor deposition on the semiconductor structure
Data Source
AI summary
A method for transferring semiconductor bodies and a semiconductor chip are disclosed. In an embodiment a method includes providing a semiconductor structure on a growth substrate, arranging a cover layer on a side of the semiconductor structure facing away from the growth substrate, wherein the cover layer is mechanically fixedly connected to the semiconductor structure, arranging a transfer structure on a side of the cover layer facing away from the semiconductor structure, wherein the transfer structure is mechanically fixedly connected to the cover layer via at least one contact structure, wherein a sacrificial layer is arranged between the cover layer and the transfer structure, and wherein the sacrificial layer does not cover any of the at least one contact structure, removing the growth substrate from the semiconductor structure, subdividing the semiconductor structure into a plurality of semiconductor bodies, arranging a carrier on a side of the semiconductor body facing away from the transfer structure, selectively removing the sacrificial layer and removing the transfer structure from the semiconductor bodies.