Semiconductor/Solid-State Device Details TRIZ Cases

A shielded semiconductor package design integrates a conductive shield layer and interposer to isolate components.

Combining rigid and flexible dielectric layers prevents cracks during fabrication while maintaining slim profiles for high-density devices.

Hydrophobic patterns guide water droplets to self-align integrated circuit dies on substrates.

A collapsed multi-integration package uses coplanar side packages to increase I/O count and reduce parasitic inductance.

Offset output pads on an IC chip connect to multi-layer base film patterns without extending through the peripheral region.

Multilayer electronic support structure with copper features protruding from dielectric material for enhanced solder bonding.

Selective re-workable underfill reduces solder ball stress by 52% and enables defective die replacement without damaging the printed circuit board.

A one-pack epoxy resin composition cures at low temperatures using a composite curing agent system.

Segmented ground impedances with distinct inductance values isolate analog and digital noise, reducing package size while maintaining power integrity.

Sacrificial via placeholders align conductive vias with one-dimensional lines, resolving lithographic complexity and improving storage density.

A dual adhesive system controls the precise gap thickness between an LED die and its bonding pad to ensure consistent heat dissipation.

A semiconductor package uses a fluorine-containing organic barrier layer on the insulating member to block water vapor and gas permeation.

Through-substrate conductors link stacked modules to surface connectors, preventing short-circuits during heating and improving yield rates.

Variable wire diameters reduce material waste and manufacturing costs while preventing wire neck tearing and contact issues in stacked semiconductor packages.

Ruthenium silicide fills gaps and connects conductive portions, reducing contact resistance while preventing ruthenium aggregation during heat treatment.

Carbon layers suppress grain growth in 3D memory, preventing worst cell current issues.

Merges computing chip with capacitive sensing layer to eliminate complex wiring, reducing processing time and production costs.

Composite refractory and noble metal layers prevent corrosion in harsh media while maintaining mechanical bond strength.

Vertical wirebonded ball stacks reduce module volume and height while mitigating mechanical shock in portable devices.

Metal lid couples to leadframe die pad forming a Faraday shield that reduces EMI and RF noise without adding external cans.

Segmented bonding via holes and lead-out pads reduce interconnection length, improving processing speed in 3D-IC devices.

A semi-dynamic reflow process deposits metallic material while heating the substrate to fill semiconductor trenches.

An adhesive layer on redistribution pads resolves low bonding strength between solder balls and ball pads in package-on-package structures.

Integrating contact points and wires within the cell eliminates external routing, reducing layout area and stray capacitance.

A composite magnetic sealing material embeds electronic components in a substrate while maintaining electromagnetic shielding.

A moisture-absorbing sheet uses fibrillated fluororesin and calcium oxide particles to control water uptake kinetics.

A protective layer over contact bumps prevents short circuits caused by material flow into voids during semiconductor substrate bonding.

Separate conductor bars handle high current in a solid-state bidirectional relay, eliminating resistance and cost from specialized PCB construction.

A semiconductor transfer method uses a cover layer and segmented contact structures to detach bodies from a growth substrate.

Nested coaxial conductors with conformal dielectric films reduce capacitance and electromagnetic interference, addressing interconnect length limitations.

A composite material carrier with high thermal conductivity supports electronic components to dissipate heat efficiently.

A surrogate substrate enables inverted growth of multijunction solar cell subcells for high-efficiency photovoltaic devices.

Stair-shaped semiconductor chip stacking with variable thickness adhesive members prevents capillary impact damage to thin chips during wire bonding.

A multi-layer bonding pad structure directly bonded to an IC substrate contact layer using ultrasonic joining.

Exchangeable jet plates in a modular manifold reduce prototype time and cost by enabling rapid evaluation of specific orifice geometries.

Segmenting the source electrode into ohmic and non-ohmic regions reduces leakage current while improving high-frequency reliability.

A heat dissipation unit uses layered thermal conductivity to direct heat away from processing components in ultrathin electronic devices.

Stacking four electrodes in BEOL gaps boosts capacitance density while maintaining uniform metal density for CMP processes.

Laser-machined grooves and specific underfill fillet lengths suppress film peeling during dicing and thermal cycling.

Laser drilling forms conductive vias through dielectric and passivation layers, simplifying via formation while protecting the chip from oxidation.

An embedded glass core patch reduces bump thickness variation and yield loss by providing a stable platform for fine-pitch interconnections.

Removing conventional tiebars eliminates void formation while an isolation cover maintains electrical separation between the lead and die attach pad.

Segmented RESURF structures resolve the contradiction between high breakdown voltage and low voltage CMOS compatibility.

Laser direct structuring forms three-dimensional circuits on molded interconnect devices.

Recessed backside metallization stop regions constrain solder bleedout, enabling larger semiconductor chips without increasing void risk.

Eliminates interposers by embedding dies directly into layered panel structures, reducing manufacturing costs while maintaining thermal management.

A thermosetting resin with multiple glass transition temperatures reduces silicon wafer warpage by up to 80 percent compared to conventional encapsulants.

Fixing the substrate to the conductive member's opposite surface eliminates through-holes, increasing available mounting area and simplifying structure.

Asymmetric offset vertical NAND channels increase memory cell density by packing more channels under a single select gate line.

Metal trace extensions reduce normalized stresses and prevent peeling between traces and low-k dielectric layers.