Semiconductor Device Transfer Using a Sacrificial Adhesion Layer
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Solution Overview
Problem
Existing methods for transferring semiconductor devices from growth substrates to support substrates often damage the growth substrate and do not allow for the reuse of the substrate, which is wasteful and environmentally unfriendly, particularly when trying to optimize light-emitting diodes where the growth substrate blocks light emission.
Innovation Solution
A method involving the formation of an adhesion structure with a sacrificial layer on a support substrate, where the semiconductor epitaxial stack is bonded using a combination of adhesion and sacrificial layers, allowing for the separation of the growth substrate using laser irradiation or etching, and subsequent transfer to a new substrate without damaging the epitaxial stack.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wet etching or physical methods such as polishing and cutting are used to remove the growth substrate, then the semiconductor epitaxial structure can be transferred to the support substrate, but the growth substrate is damaged and cannot be reused
Solution Approach 1:
A sacrificial layer is formed between the semiconductor epitaxial structure and the growth substrate before the transfer process. This sacrificial layer is designed to be selectively removed, enabling the epitaxial structure to be separated and transferred to the support substrate while leaving the growth substrate intact and reusable for subsequent epitaxial growth processes
Solution Approach 2:
The sacrificial layer acts as an intermediary between the growth substrate and the semiconductor epitaxial structure. It facilitates the transfer process by providing a temporary bonding interface that can be selectively removed, allowing the epitaxial structure to be transferred without damaging the growth substrate
2Manufacturing precision
If an opaque growth substrate is used for red light-emitting diode to achieve high-quality semiconductor epitaxial structure, then the lattice constant match is optimized, but the growth substrate blocks light and decreases light-emitting efficiency
Solution Approach 1:
The system is divided into three separate components: the growth substrate, the semiconductor epitaxial structure, and the support substrate. This segmentation allows the epitaxial structure to be grown on the opaque growth substrate for optimal lattice matching, then transferred to a transparent support substrate that allows light to pass through, thereby resolving the contradiction between structural quality and light emission efficiency
Solution Approach 2:
The support substrate serves as an intermediary that replaces the growth substrate's light-blocking function. After the epitaxial structure is transferred from the opaque growth substrate to the transparent support substrate, the support substrate provides mechanical support while allowing light to pass through, thus maintaining both structural integrity and light-emitting efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the efficient transfer of semiconductor devices while preserving the integrity of the epitaxial stack and allowing for the reuse of the growth substrate, thereby improving light-emitting efficiency and reducing environmental impact.
Implementation Method 1
forming an adhesion structure with a sacrificial layer on a support substrate, where the semiconductor epitaxial stack is bonded using a combination of adhesion and sacrificial layers
Implementation Method 2
allowing for the separation of the growth substrate using laser irradiation or etching
Implementation Method 3
allowing for the separation of the growth substrate using laser irradiation or etching
Data Source
AI summary
A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.