Semiconductor Internal Transmission Path for Low Power HBM
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Solution Overview
Problem
High bandwidth memory (HBM) devices face challenges in minimizing power consumption due to the high swing levels of signals transmitted through internal I/Os, which increase power consumption as the power supply voltage level rises.
Innovation Solution
A semiconductor device is designed to minimize the swing width of signals through an internal transmission path by using an N-over-N driver for transmission and a strong-arm latch type sense amplifier for reception, along with a decision feedback equalizer (DFE) to compensate for inter-symbol interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the power supply voltage level is increased to improve signal transmission capability, then the signal swing level increases, but the power consumption increases significantly
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the reference voltage level used for signal threshold determination. Instead of using a fixed reference voltage, the system varies the reference voltage parameter based on signal conditions to optimize both transmission reliability and power consumption. This allows the receiver to accurately detect signals without requiring high swing levels, thereby reducing power consumption while maintaining reliable transmission.
Solution Approach 2:
The patent implements feedback mechanisms through decision feedback equalizers (DFE) that use previously detected signal levels to adjust current signal interpretation. The system feeds back information about signal quality and timing to dynamically adjust reference levels and equalization parameters, enabling reliable signal reception at lower power consumption levels by compensating for signal degradation through intelligent feedback control rather than brute-force voltage increases.
2Productivity
If the number of internal I/Os is increased to improve data bandwidth, then the processing capability increases, but the total power consumption increases due to more high-swing signal paths
Solution Approach 1:
The patent extends parameter changes to multi-channel systems by applying dynamic reference voltage adjustment across multiple internal I/O channels. Each channel or group of channels can have optimized reference voltage levels based on their specific signal characteristics and timing requirements. This allows the system to support thousands of internal I/Os for high bandwidth while keeping individual channel power consumption low through parameter optimization rather than uniform high-voltage operation.
Solution Approach 2:
The patent applies segmentation by dividing the large number of internal I/Os into manageable groups or channels, each with independently optimized reference voltage levels and timing parameters. This segmentation allows selective power management where not all channels need to operate at maximum performance simultaneously, enabling high aggregate bandwidth while controlling total power consumption through selective activation and optimization of individual channel segments.
Data Source
AI summary
A semiconductor device comprising: a first circuit configured to generate a transfer signal by decreasing an amplitude of an input signal provided through a first interface and configured to transfer the transfer signal through a transfer path, and a second circuit configured to generate an output signal by increasing an amplitude of the transfer signal transferred through the transfer path and configured to output the output signal through a second interface, wherein the second circuit includes a skewed inverter configured to asymmetrically set a reference level for determining a logic level of the transfer signal.


