Semiconductor Device Trench Structure Breakdown Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices face challenges in ensuring sufficient breakdown voltage, especially when miniaturized, due to the extension of the depletion layer and impurity concentration in semiconductor regions, which affects their performance in drive control circuits for induction motors.
Innovation Solution
A semiconductor device design incorporating a trench structure with a predetermined depth and specific impurity concentrations in semiconductor regions, including a p− buried layer with a low impurity concentration to ensure complete depletion and prevent pn junction formation, allowing for reduced footprint and enhanced breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the semiconductor device is reduced in footprint to miniaturize the drive control circuit, then the area is reduced, but the breakdown voltage becomes insufficient
Solution Approach 1:
The semiconductor device is divided into multiple regions with different impurity concentrations: a first semiconductor region with high impurity concentration, a second semiconductor region with intermediate impurity concentration, and a third semiconductor region with low impurity concentration. This segmentation allows each region to contribute differently to the overall breakdown voltage while maintaining a compact footprint.
Solution Approach 2:
Different regions of the semiconductor device are assigned different impurity concentrations tailored to their specific functions. The third semiconductor region with low impurity concentration is specifically positioned to extend the depletion layer and enhance breakdown voltage in critical areas, while other regions maintain higher impurity concentrations for conductivity and switching performance.
2Reliability
If the semiconductor device is configured of semiconductor regions including a semiconductor region having some impurity concentration, then the conductivity is improved, but the breakdown voltage becomes insufficient
Solution Approach 1:
The semiconductor device is divided into multiple regions with different impurity concentrations: a first semiconductor region with high impurity concentration, a second semiconductor region with intermediate impurity concentration, and a third semiconductor region with low impurity concentration. This segmentation allows each region to contribute differently to the overall breakdown voltage while maintaining a compact footprint.
Solution Approach 2:
The impurity concentration parameter is systematically varied across different regions of the semiconductor device. The third semiconductor region is designed with low impurity concentration to extend the depletion layer depth, while the first and second regions maintain higher concentrations for conductivity. This parameter optimization ensures sufficient breakdown voltage without excessive device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves sufficient breakdown voltage and miniaturization while preventing reduced breakdown voltage issues, ensuring reliable operation in drive control circuits for induction motors.
Implementation Method 1
the fifth semiconductor region, with the field effect transistor in an off state, to be completely depleted by a depletion layer extending from an interface with the second semiconductor region and a depletion layer extending from an interface with the first semiconductor region
Data Source
AI summary
An n− type semiconductor region is provided with an n− diffusion region serving as a drain region, and at one side of the n− diffusion region a p diffusion region and an n+ diffusion region serving as a source region are provided. At an other side of the n− diffusion region a trench is provided and has an insulator introduced therein. Immediately under the n− diffusion region a p− buried layer is provided. In a region of the n− semiconductor region an n+ diffusion region to which a high potential is applied is provided and electrically connected to the n− diffusion region by an interconnect having a resistor. On a surface of a portion of the p diffusion region that is sandwiched between the n+ diffusion region and the n− diffusion region a gate electrode is provided, with a gate insulation film posed therebetween.