Semiconductor Device Deep Diffusion Region Trench Sidewall
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Solution Overview
Problem
Current semiconductor device processing methods face challenges in creating deep doped semiconductor regions with precise dopant concentration profiles, particularly in power semiconductor transistors, which affect their performance and efficiency in high-voltage and high-current applications.
Innovation Solution
A method involving the creation of trenches in a semiconductor body, where a substance is applied selectively to one trench sidewall and bottom, diffusing to form a semiconductor region with a second conductivity type, allowing for controlled dopant concentration profiles along the vertical direction, enabling efficient isolation and performance enhancement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If diffusion is carried out to create deep doped semiconductor regions, then the dopant concentration profile precision is improved, but the manufacturing complexity increases
Solution Approach 1:
The semiconductor device is divided into multiple regions with different doping characteristics. Deep diffusion regions are created in specific zones (such as drift regions) separate from other doped regions, allowing independent optimization of dopant concentration profiles in each segment without affecting the entire device structure.
Solution Approach 2:
Different dopant concentration profiles are applied to different regions of the semiconductor device. The deep diffusion regions have specific doping characteristics tailored to their function, while other regions maintain different doping levels. This local differentiation enables precise control of electrical properties in high-voltage and high-current areas without compromising overall device performance.
2Reliability
If deep diffusion regions are created to enhance high-voltage capabilities, then the device performance is improved, but the processing time increases
Solution Approach 1:
The semiconductor structure is prepared in advance with pre-formed trenches, isolation regions, and preliminary doping patterns before the deep diffusion process. This preliminary preparation allows the subsequent deep diffusion to be more efficient and targeted, reducing the overall processing time required to achieve the desired high-voltage characteristics.
Solution Approach 2:
The diffusion process parameters (temperature, time, dopant source concentration) are optimized and adjusted to achieve deep diffusion regions with precise dopant concentration profiles more quickly. By carefully controlling these parameters, the processing time for creating deep doped regions is reduced while maintaining the required reliability and high-voltage capability.
3Ease of manufacture
If selective doping is applied to trench sidewalls to create asymmetric dopant distribution, then the isolation efficiency is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The semiconductor device incorporates asymmetric doping patterns where dopant concentrations are deliberately made unequal on opposite sides of trenches or in different regions. This asymmetric distribution enhances isolation efficiency by creating stronger potential barriers in critical areas while maintaining electrical performance in other regions, achieving better isolation without requiring uniform precision across the entire device.
Solution Approach 2:
High manufacturing precision is applied only where critically needed for isolation, while other regions tolerate broader tolerances. The selective doping process targets specific localized areas with precise dopant placement, while adjacent regions use less stringent doping parameters, reducing overall manufacturing precision requirements while maintaining effective isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of semiconductor regions with precise dopant concentration profiles, enhancing the performance and efficiency of power semiconductor transistors by improving their high-voltage and high-current capabilities.
Implementation Method 1
diffusing of the applied substance from the section into the semiconductor body, thereby creating, in the semiconductor body, a semiconductor region having dopants of a second conductivity type
Data Source
AI summary
A method of processing a semiconductor device, comprising: providing a semiconductor body having dopants of a first conductivity type; forming at least one trench that extends into the semiconductor body along a vertical direction, the trench being laterally confined by two trench sidewalls and vertically confined by a trench bottom; applying a substance onto at least a section of a trench surface formed by one of the trench sidewalls and/or the trench bottom of the at least one trench, such that applying the substance includes preventing that the substance is applied to the other of the trench sidewalls; and diffusing of the applied substance from the section into the semiconductor body, thereby creating, in the semiconductor body, a semiconductor region having dopants of a second conductivity type and being arranged adjacent to the section.