Semiconductor Transistor With Trench Gate And Insulating Layer
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Solution Overview
Problem
Power transistors in automotive and industrial electronics require a balance between low on-state resistance and high voltage blocking capability, which existing semiconductor devices struggle to achieve effectively.
Innovation Solution
A semiconductor device with a transistor structure featuring a source region, drain region, body region, drift zone, and gate electrode, where the gate electrode is disposed in trenches and an insulating layer is adjacent to the second main surface, allowing for improved conductivity and voltage blocking characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the drift zone is implemented by a plurality of semiconductor layers having different conductivity types, then voltage blocking capability is improved, but on-state resistance increases
Solution Approach 1:
The drift zone is segmented into multiple alternating semiconductor layers with different conductivity types (n-type and p-type), creating a superjunction structure. This segmentation allows the voltage blocking capability to be enhanced through the layered structure while maintaining low on-state resistance by optimizing the doping and geometry of each segment.
Solution Approach 2:
Different regions of the drift zone are assigned different local qualities through varying conductivity types and doping concentrations in alternating layers. The n-type layers provide electron conduction paths while p-type layers provide hole conduction paths, creating localized conduction channels that reduce overall on-state resistance while the combined structure provides high voltage blocking capability.
2Manufacturing precision
If the gate electrode is disposed in trenches, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The gate electrode is positioned in the vertical dimension by forming trenches that extend through the drift zone, rather than positioning it only in the horizontal plane. This dimensional change enables precise control of the gate's position and dimensions through vertical etching processes, improving manufacturing precision while the systematic trench formation maintains reasonable device complexity.
Data Source
AI summary
A semiconductor device comprises a transistor in a semiconductor body having a first main surface and a second main surface, the first main surface being opposite to the second main surface. The transistor comprises a source region at the first main surface, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The gate electrode is disposed in trenches extending in the first direction. The transistor further comprises an insulating layer adjacent to the second main surface of the body region. The source region vertically extends to the second main surface.