3D Semiconductor Stack Structure Stabilized by Trench Supporter
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Solution Overview
Problem
The process of forming gap regions in three-dimensional (3D) semiconductor devices is prone to difficulties such as stack structure collapse due to the removal of sacrificial layers, which complicates the formation of stable structures.
Innovation Solution
A semiconductor device design incorporating a supporter within buried trenches, with a stack structure of alternately stacked insulating and conductive layers, and isolation trenches, which stabilizes the structure and simplifies the process by using a method involving the formation of a preliminary stack structure and subsequent removal of sacrificial layers to create gap regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If sacrificial layers are removed to form gap regions, then the stack structure can be formed with conductive layers, but the stack structure may collapse during the process
Solution Approach 1:
The patent introduces a supporter structure formed in advance within the stack structure before sacrificial layer removal. This supporter acts as a preliminary support mechanism that prevents stack structure collapse during the subsequent gap region formation process, allowing the sacrificial layers to be removed safely while maintaining structural integrity.
Solution Approach 2:
The supporter structure serves as an intermediary element between the stack structure and the gap region formation process. It provides mechanical support to the stack structure during the critical phase of sacrificial layer removal, mediating between the need to create gap regions and the need to maintain stack structure stability.
2Reliability
If a supporter structure is added to prevent collapse, then stack structure stability is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent merges the supporter structure formation with the existing stack structure formation process. The supporter is formed within the same fabrication sequence using compatible materials and processes, combining multiple functions into a unified structure rather than adding separate complex components.
Solution Approach 2:
The supporter structure serves multiple functions: it provides mechanical support to prevent collapse, defines the gap region boundaries, and maintains structural integrity during subsequent processing steps. This multi-functionality reduces the need for additional separate structures or processes.
3Adaptability or versatility
If the stack structure is formed with alternately stacked insulating and conductive layers, then device functionality is improved, but the process difficulty increases due to precise layer alignment requirements
Solution Approach 1:
The patent segments the stack structure into distinct insulating layers and conductive layers that are alternately stacked. This segmentation allows for independent formation and precise positioning of each layer type, with the supporter structure providing reference points that facilitate accurate alignment during the alternating deposition process.
Data Source
AI summary
A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.