Solid-State Devices TRIZ Cases

A workpiece division method uses laser heating to increase brittleness along a dividing line, enabling separation with an expanding sheet.

A nonvolatile memory cell applies distinct voltage levels to the well and gate of selection transistors during read operations.

A dual row input output configuration places logic circuits between stacked cell rows to maintain uniform interconnect lengths.

Modeling multiple dies as a single 3D space reduces routing congestion and layer promotions caused by hard macro blockages.

A metal layer shields the active layer in organic light-emitting displays.

Staggered electrodes formed by a half-tone mask create a longitudinal electric field component, improving liquid crystal utilization without adding masks.

Dual-height banks guide solution flow to form uniform film layers, resolving inkjet printing inhomogeneity and enhancing light emission quality.

An optoelectronic device combines a catalytic MOSFET for total concentration with a photodiode for polycyclic aromatic hydrocarbon selectivity.

A full-spectrum LED light source uses three blue LED chips with distinct peak wavelengths to excite composite phosphors for continuous spectral output.

A CCD multiplication register uses a buried channel implant to increase depleted charge density beneath high voltage electrodes.

Piezoelectric stress on transistors resolves the power consumption versus performance trade-off by enabling dynamic mode switching.

Integrating the OLED cathode as a touch electrode eliminates separate panel layers, reducing device thickness and improving light transmittance.

A complementary thin film transistor merges conductive and gate layers to simplify manufacturing.

A semiconductor memory device uses insulated bit lines to store and retrieve data efficiently.

Vertical epitaxial growth in substrate recesses extends active regions, increasing drive current without expanding lateral cell size.

Segmenting the main and secondary printed boards isolates high-frequency signals, reducing dielectric loss while lowering manufacturing costs.

Laser preheating softens frit material along the cutting line to enable precise separation, reducing bezel width while maintaining panel reliability.

A passivation layer contact hole joins the OLED cathode and auxiliary electrode, eliminating complex reverse-tapered partitions prone to collapse.

A 3D semiconductor stack structure incorporates a trench supporter to prevent collapse when removing sacrificial layers for gap region formation.

Stepwise n-type dopant gradients in OLED charge generation layers enhance electron injection, resolving transport imbalance and extending device lifespan.

Alternating GaInN and AlGaInN layers reduce threading dislocations from lattice mismatch, boosting optical output.

A 3D memory device adjusts bit line voltages based on channel structure separation distances to narrow threshold voltage distribution.

Segmented display panel eliminates residual space from mismatching pixel sizes near hole-punch, enhancing resolution and fingerprint recognition.

A backside absorption layer shields dark pixels from penetrating infrared radiation, maintaining calibration accuracy in thin substrates.

Amorphous dielectric layer blocks grain boundary propagation in MIM capacitors, preventing leakage paths and enhancing reliability.

Ion implantation forms diffusion layers before gate electrode deposition, eliminating offset regions and suppressing short-channel effects.

A micro LED display panel integrates a ground ring structure to electrically connect top electrode layers for efficient light emission.

Light-driven liquid crystal elastomer adjusts screen shape automatically, resolving the trade-off between viewing comfort and mechanical complexity.

Controlled ammonia addition rates during halosilane reaction prevent excessive shrinkage and void formation in semiconductor capacitor films.

A semiconductor light-emitting element uses a multi-layer electrode structure to improve junction and anticorrosion properties.

Pixel-dependent optical adjustment layers optimize emission intensity and narrow the spectrum to eliminate color shift phenomena.

Reducing word line height below erase gate level eliminates concave void defects and improves dielectric filling for reliable read operations.

Conductive adhesive reaches heatsink side surface under emitter, improving heat dissipation while preventing laser light blockage.

A patterned conductive layer contacts an oxide semiconductor via passivation through holes to enable stable thin film transistor operation.

Raised side walls at data line cross-overs reduce parasitic capacitance, minimizing scan line delay and preventing luminance non-uniformity.

Segmenting the common semiconductor layer with varying impurity concentrations prevents current leakage between unselected strings.

A thin film transistor coupled to a light emitting diode converts chemical gas exposure into visible brightness changes.

Selective removal of a sacrificial oxide layer transfers a donor nitride layer, avoiding time-consuming back etching processes.

Switching threshold voltage states via a ferroelectric layer maintains low on-state resistance while handling high maximum RF power.

A detection sensor integrates a biometric sensing layer with an optical pattern layer featuring transmission parts and recessed light-shield patterns.

Isotropic etching creates lateral air cavities under the device to disrupt substrate coupling and reduce signal distortion.

Simultaneous back-to-back cell programming minimizes thermal disturb by synchronizing heat generation, preserving data integrity in phase change memory.

Alternating odd-even column polarities in RGBW pixel arrays prevents crosstalk, maintaining accurate picture brightness and color representation.

Transition metal alloy resistors maintain stable resistance below 100 millikelvin, solving contamination issues in silicon foundries.

AlON phosphors incorporate metal ions in solid solution to emit high-intensity fluorescence, resolving low brightness and durability issues in plasma displays.

A display panel uses a patterned anode structure to route light through the photosensitive region toward the camera sensor.

Nested conductive layer trenches in a 3D silicon capacitor boost capacitance density while avoiding the complex alignment required by traditional MLCCs.

A flexible display device uses an inorganic protective layer and organic insulating layers to connect inner and outer wiring across a bent area.

A concave reflecting electrode formed by inkjet printing enhances light reflection in thin film transistor array panels.

A semiconductor layer with switchable in-plane polarization enables non-destructive data retrieval via perpendicular tunneling current detection.