Semiconductor Element Triple Poly Via Hole Formation
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Solution Overview
Problem
The existing processes for producing semiconductor elements with a triple poly structure are complex due to the need for separate masks during contact etches, leading to metal differences and process difficulties when connecting via holes with top metal.
Innovation Solution
A method involving the simultaneous formation of via holes to electrically connect center and gate poly electrodes, using a source metal and gate metal that are substantially coplanar, with a barrier metal of titanium or titanium nitride, and an insulating film including high temperature low pressure deposition oxide and borophosphosilicate glass, to simplify the process and reduce metal differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate masks are used during contact etches for upper portion of center poly and upper portion of p-body region, then via holes can be connected with top metal, but the whole process becomes complicated and metal difference occurs
Solution Approach 1:
The patent combines the contact etch processes for the center poly and p-body region into a single simultaneous etching step using one mask pattern, rather than performing separate etches with separate masks. This merging of operations simplifies the overall process while maintaining the precision needed for via hole connections to top metal.
2Manufacturing precision
If separate masks are used during contact etches, then via holes can be formed, but severe metal difference occurs causing difficulties in succeeding processes
Solution Approach 1:
By performing contact etches for both center poly and p-body region simultaneously in one step, the patent eliminates the sequential mask alignment processes that cause metal difference. This single-step approach ensures consistent etch conditions and timing, preventing the metal layer misalignment that would otherwise compromise process reliability.
Data Source
AI summary
A semiconductor element and a method for producing the same are provided. A semiconductor element includes an active region comprising trenches, a termination region outside the active region, a transient region disposed between the active region and the termination region, the transient region including an inside trench, in which a center poly electrode is disposed inside at least one of the trenches of the active region, at least two gate poly electrodes are disposed adjacent to an upper portion of the center poly electrode, a p-body region is disposed between upper portions of the trenches, and a source region is disposed at a side of the gate poly electrodes.