Semiconductor/Solid-State Device Manufacturing TRIZ Cases

A showerhead design uses concentric supporting gas orifices to surround source gas jets, preventing unwanted film deposition on the jetting surface.

Conformal sidewall mask deposition shields the hard mask during via etching, reducing critical dimension elongation and preventing metal line shorts.

A planar power MOS transistor uses a trench gate to laterally connect source and drain regions, enabling compact integration with CMOS circuits.

A silicon carbide ohmic electrode uses a nickel-phosphorus alloy to form a silicide layer containing Ni5P2.

Adjustable guide members in a transport vacuum chamber align frame assemblies within ±1 mm and ±1° tolerance, replacing complex optical systems.

A silicon compound film stacked between chromium and transition metal layers enables precise photomask pattern formation.

Periodic heating and gas pressurization remove silicon oxide films from deep trenches, preventing incomplete etching that increases resistance values.

A wafer with a peripheral reinforcing flange reduces series resistance while maintaining mechanical integrity.

Metallurgical bonding of an n+ substrate to an n- layer reduces on-resistance while maintaining high blocking voltage capability.

Regrow nitrogen-face gallium nitride layers using in-situ plasma treatment to modify template surfaces for epitaxial growth.

An N-type cathode buffer layer stops depletion expansion toward the cathode electrode, suppressing reverse leakage current caused by grinding defects.

A cyclic deposition method forms silicon thin films using repeated precursor injection and purge steps within a plasma atmosphere.

A two-step etching process combines metal-assisted chemical etching with a subsequent isotropic regularizing step to form nanostructured silicon surfaces.

Threaded purge connectors with removable modules enable larger filters that reduce gas flow resistance while maintaining precise container dimensions.

An image sensor measures non-film forming portions to calculate position discrepancies, correcting transfer targets without manual unloading.

A semiconductor superlattice structure constrains oxygen monolayers within silicon crystal lattices to reduce charge carrier effective mass.

Etching the semiconductor absorber layer creates a roughened surface that resolves poor back contact adhesion and enhances grain growth uniformity.

Local copper silicide formation at via bottoms enhances electromigration resistance without increasing leakage currents or process complexity.

A swirl chamber generates balanced pressure zones to hold workpieces without contact.

A silicon photonic modulator integrates a resistive heater within a disk resonator to tune the optical signal frequency.

A metal-containing resist underlayer composition prevents reflection and intermixing with EUV resists.

A method forms metal silicide regions using substrate trench structures as natural masks to define specific areas.

Single mask contact etch joins center and gate poly electrodes, eliminating separate steps that cause metal differences.

Segmented field plates minimize gate-drain capacitance while maintaining shielding effects, improving HEMT electrical characteristics.

A two-layer seal prevents dopant loss by maintaining thickness during wet cleaning.

Galvo scanner laser scribing creates patterned masks for plasma etching, eliminating mechanical chipping and cracking along dice edges.

A Group III nitride semiconductor light-emitting device incorporates a superlattice strain relaxation layer to manage stress at the interface.

Segmented chemical vapor deposition ensures stoichiometric uniformity in germanium telluride films, resolving reliability issues in scaled memory circuitry.

Pulsed nucleation enables low-temperature tungsten nitride deposition, resolving step coverage and adhesion issues in high aspect ratio features.

A nonvolatile charge trap memory device with a <100> crystal plane channel orientation.

A container changing system with a vertical lifting unit moves FOUPs between carriers and mounting portions.

Optical grating layer uses light measurement to monitor trench depth during angled surface relief formation.

An atomic layer deposited alumina coating protects the inner glass surface from plasma damage, extending high power low pressure UV bulb lifetime.

A wiper tape cleaning head removes adhesive residues from photomasks using continuous mechanical contact and solvent application.

Calibrated thermal annealing controls Ni-InGaAs intermetallic contact morphology and phase formation.

Magnesium doping modifies CdS semiconductor layers to enable thinner structures in photovoltaic cells.

Segmented n-grade and p-top regions lower on-resistance by 11.6% while maintaining breakdown voltage in high-voltage LDMOS devices.

Vanadium tetrachloride reacts with nitrogen during silicon carbide epitaxial growth to lower impurity levels in the n-type layer.

A semiconductor device fabrication method employs segmented etching through distinct stop layers to form precise source/drain and gate contacts.

A raised conductive portion bridges the gap between metal bump terminals and ITO layers in liquid crystal display devices.

Opposite gas introduction and discharge holes establish unidirectional flow to improve film-forming uniformity while simplifying the apparatus structure.

An inclined door unit design minimizes friction between components in substrate processing chambers.

Fluorinated solvent substitution prevents pattern collapse during supercritical drying by lowering surface tension and maintaining low humidity.

Organic underlayer films replace metal oxides to eliminate ArF light reflection and metal contamination during dry etching.

CO2 plasma etches an organic planarization layer to define dual damascene features without damaging the underlying porous low-k dielectric.

An initial tungsten film protects underlying layers during deposition.

A gas mixed liquid polishes semiconductor surfaces using diffusion-dominated etching.

UV photodissociation removes contaminants from calibration substrates while maintaining temperature below 50°C to prevent oxide growth.

Dissolving gas reduces surface tension to fill recesses, resolving trapped air defects in semiconductor manufacturing.

A vertical field-effect transistor uses a recessed dielectric layer to define the gate electrode space between source and drain regions.