Semiconductor Via Layout With Extension Region for Yield and Speed
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Solution Overview
Problem
As integration density of semiconductor devices increases, they suffer from deterioration in electrical characteristics and production yield, making it challenging to achieve high operating speeds and low power consumption.
Innovation Solution
A semiconductor device design incorporating a source structure with a cell region, extension region, gate stack, stepwise insulating layer, and via structure, including interconnection layers and dummy stacks, to enhance electrical and reliability characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration density of the semiconductor device is increased, then the device size is reduced and functionality is enhanced, but electrical characteristics deteriorate and production yield decreases
Solution Approach 1:
The source structure is divided into a cell region and an extension region. The cell region contains the main memory cell transistors while the extension region contains dummy transistors and via structures. This segmentation allows the high-density cell region to be separated from the reliability-enhancing extension region, enabling improved electrical characteristics without reducing integration density.
Solution Approach 2:
The extension region acts as an intermediary between the cell region and peripheral circuits. It includes dummy transistors that match the electrical characteristics of cell transistors and via structures that provide additional connection paths. This intermediary region buffers and matches impedance, improving signal integrity and electrical characteristics while maintaining high integration density in the cell region.
2Quantity of substance
If integration density of the semiconductor device is increased, then the device size is reduced and functionality is enhanced, but production yield decreases
Solution Approach 1:
The extension region is designed with specific local characteristics including dummy transistors with matched electrical properties and via structures with optimized dimensions. These local quality enhancements in the extension region improve overall device reliability and production yield without affecting the high integration density of the cell region.
Solution Approach 2:
The extension region with dummy transistors and via structures serves as a cushioning region that compensates for process variations and electrical mismatches before signals reach peripheral circuits. This beforehand cushioning reduces the impact of manufacturing variations, improving production yield while maintaining high integration density.
3Speed
If operating speed is increased, then data processing capability is enhanced, but power consumption increases
Solution Approach 1:
The extension region acts as an intermediary that provides impedance matching and signal conditioning between the cell region and peripheral circuits. By reducing signal reflections and mismatches, the extension region enables higher operating speeds without requiring excessive power consumption for signal driving.
Solution Approach 2:
The via structures in the extension region are designed with optimized dimensions and materials to reduce resistance and capacitance. This parameter optimization reduces the RC delay in interconnections, enabling higher operating speeds while minimizing the power consumption required for signal transmission.
Data Source
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AI summary
A semiconductor device may include a source structure including a cell region and an extension region adjacent to the cell region, a gate stack in the cell and extension regions, a penetration contact disposed in the extension region, a stepwise insulating layer disposed on the gate, and an interconnection structure on the stepwise insulating layer. The interconnection structure may include a first interconnection insulating layer, a first lower conductive pattern in the first interconnection insulating layer, a capping layer on the first interconnection insulating layer, and a via structure penetrating the capping layer. The via structure may include a plurality of first vias connected to the first lower conductive pattern and connected to an upper conductive pattern, and the first vias may be disposed in the extension region.