Semiconductor Via Hole Formation Using Integrated Etching and Ashing
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Solution Overview
Problem
Conventional semiconductor manufacturing methods require separate dedicated apparatuses for etching and ashing processes, leading to reduced production efficiency, mechanical defects, and reliability issues due to repeated substrate transfers and misalignment of support members.
Innovation Solution
A method where the etching and mask layer removal processes are performed sequentially within the same etcher, allowing for simultaneous smoothing of the semiconductor substrate's surface and sidewalls, eliminating the need for multiple apparatus transfers and optimizing the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate dedicated apparatuses are used for etching and ashing processes, then each process can be performed with specialized equipment, but production efficiency is reduced due to repeated substrate transfers
Solution Approach 1:
The patent combines the etching apparatus and ashing apparatus into a single integrated system. The same vacuum chamber and processing stage are used for both etching with fluorocarbon-based plasma and subsequent ashing with oxygen plasma, eliminating the need to transfer substrates between separate apparatuses while maintaining process quality through controlled plasma parameters
Solution Approach 2:
The processing apparatus is designed to perform multiple functions: it can conduct etching processes using fluorocarbon-based plasma to form openings, and subsequently perform ashing processes using oxygen plasma to remove mask layers. The same vacuum chamber, power supply system, and gas delivery system are utilized for both functions, improving productivity without sacrificing process capability
2Reliability
If substrates are transferred between multiple apparatuses, then dedicated processes can be performed, but mechanical defects occur due to repeated handling
Solution Approach 1:
By integrating etching and ashing functions in a single apparatus, the patent eliminates repeated substrate transfers and handling operations. The substrate remains on the same stage within the same vacuum chamber throughout both processes, preventing mechanical defects that would otherwise occur during transfers between separate etching and ashing apparatuses
3Ease of operation
If support members are shifted between apparatuses, then substrate positioning can be adjusted, but misalignment occurs reducing reliability
Solution Approach 1:
The patent uses a single support member within one vacuum chamber for both etching and ashing processes. The support member remains in the same position throughout both operations, eliminating misalignment issues that would occur if the substrate and support member were transferred between separate apparatuses. The integrated system ensures consistent positioning accuracy while maintaining operational ease
4Reliability
If multiple apparatuses are used for etching and ashing, then process control can be optimized, but manufacturing complexity increases
Solution Approach 1:
The patent designs a single multi-functional apparatus that performs both etching and ashing processes. The same vacuum chamber, power supply system, gas delivery system, and control electronics are used for both processes, reducing manufacturing complexity while maintaining optimized process control through programmable parameters for different plasma chemistry modes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances production efficiency, reduces mechanical defects, and improves the reliability and yield of semiconductor devices by maintaining the semiconductor substrate in a single apparatus throughout the etching and ashing processes, ensuring smoother surfaces for homogeneous film deposition.
Implementation Method 1
forming an opening in the semiconductor substrate by dry-etching the semiconductor substrate using the mask layer as a mask with an etcher
Implementation Method 2
removing the mask layer with the etcher with the semiconductor substrate still placed in the etcher
Data Source
AI summary
The invention provides a method of manufacturing a semiconductor device which achieves high reliability and high yield as well as high production efficiency. Back surface grinding (back grinding) is performed to a semiconductor substrate to thin the semiconductor substrate. A damaged layer formed by the back surface grinding is not removed at this time, and a photoresist layer is selectively formed on the back surface of the semiconductor substrate. The semiconductor substrate is then etched using the photoresist layer as a mask to form a via hole. The photoresist layer is then removed with the semiconductor substrate still placed in an etcher used in the etching process subsequently after the formation of the via hole. In this manner, the etching process and the next ashing process are performed sequentially in one apparatus. Then a process of removing the damaged layer on the back surface of the semiconductor substrate and a process of smoothing the sidewall of the via hole are simultaneously performed subsequently after the ashing process in the same apparatus.