Semiconductor Device Integrating Volatile and Non-Volatile Memory
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Solution Overview
Problem
Current techniques for mounting non-volatile and volatile memory devices on printed circuit boards face limitations in integration and operation speed, particularly in achieving higher integration and faster operation.
Innovation Solution
A semiconductor device with a substrate featuring a volatile memory region and a non-volatile memory region, where the volatile memory region includes a cell capacitor and transistor, and the non-volatile memory region consists of alternately stacked mold layers and gate electrodes, allowing for efficient formation of both types of memory cells in a single substrate with reduced signal transfer paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If non-volatile and volatile memory devices are mounted on a printed circuit board and connected by wires, then the devices can be connected and operated, but integration is limited and operation speed is reduced
Solution Approach 1:
The patent combines non-volatile memory cells and volatile memory cells into a single semiconductor device structure, where both types of memory cells are formed in the same substrate. This merging eliminates the need for separate devices and wire connections, thereby improving operation speed and achieving higher integration.
Solution Approach 2:
The patent utilizes vertical stacking of mold layers and gate electrodes to create three-dimensional memory structures. By transitioning from two-dimensional planar arrangements to three-dimensional stacked configurations, the device achieves higher integration density while maintaining fast operation through reduced signal paths.
2Adaptability or versatility
If non-volatile and volatile memory devices are mounted separately on a printed circuit board, then each device can function independently, but higher integration cannot be achieved
Solution Approach 1:
The semiconductor device structure is designed to accommodate both non-volatile memory cells and volatile memory cells within the same substrate, enabling a single device to perform multiple memory storage functions. This multi-functional design achieves higher integration without requiring separate independent devices.
Solution Approach 2:
Both non-volatile and volatile memory cells are integrated into a unified semiconductor device with shared substrate and interconnected structures, eliminating the need for separate device mounting and wire connections, thereby achieving higher integration capability.
Data Source
AI summary
A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.