Semiconductor Internal Voltage Generator Dynamic Switching
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Solution Overview
Problem
The internal voltage generated by semiconductor devices decreases during sensing operations in memory cell arrays, leading to reduced operation speed due to increased current consumption.
Innovation Solution
A semiconductor device with a comparator, internal voltage generator, control signal generator, and selector that dynamically switches between two target voltages during over-driving and sensing operations to maintain optimal voltage levels, and a current controller to manage bias current based on control signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the internal voltage is increased to maintain operation speed during sensing operations, then the operation speed is improved, but the current consumption increases
Solution Approach 1:
The patent implements dynamic voltage adjustment by switching between two target voltages (first target voltage during over-driving operation, second target voltage during sensing operation) based on the operational phase. The selector dynamically selects the appropriate target voltage in response to control signals, allowing the internal voltage to be optimized for each operational phase rather than maintaining a fixed high voltage throughout
Solution Approach 2:
The patent performs preliminary voltage adjustment during the over-driving operation phase by selecting the first target voltage before the sensing operation begins. This preliminary action ensures that the internal voltage is properly conditioned and stable before the actual sensing operation, preventing voltage drops that would occur if voltage adjustment were delayed until during the sensing phase
2Speed
If the internal voltage is maintained at a high level, then the operation speed is improved, but the voltage stability during sensing operations deteriorates
Solution Approach 1:
The system dynamically adjusts the target voltage level based on the operational phase. During over-driving operation, the first target voltage is selected to enable rapid voltage adjustment and charging. During sensing operation, the second target voltage is selected to maintain stable voltage levels, preventing the voltage instability that would occur if a single high voltage level were maintained throughout both phases
3Device complexity
If a single target voltage is used for both over-driving and sensing operations, then the device complexity is reduced, but the adaptability to different operational phases deteriorates
Solution Approach 1:
The patent introduces dynamic adaptability through the selector that switches between two target voltages based on operational phase. This allows the system to adapt its voltage characteristics to match the requirements of different operational phases (over-driving vs. sensing) without requiring a completely separate voltage generation system for each phase
Solution Approach 2:
The same internal voltage generator and comparator circuitry serves multiple functions by operating with different target voltages depending on the phase. The selector enables this multi-functionality by routing the appropriate target voltage to the comparator, allowing a single circuit to perform both over-driving and sensing operations with optimized voltage levels for each
Data Source
AI summary
A semiconductor device includes a comparator, an internal voltage generator, a control signal generator, and a selector. The comparator may compare a reference voltage to an internal voltage and output a comparison signal. The internal voltage generator may generate and output the internal voltage in response to the comparison signal. The control signal generator may generate a control signal. The selector may receive first and second target voltages, and select and output one of the first and second target voltages as the reference voltage in response to the control signal.