Semiconductor Device Voltage Selector Step-Up Circuit

Solution Overview

Problem

Conventional semiconductor devices with integrated drive circuits for external devices face increased chip size and cost due to the need for a separate step-up circuit to supply high voltages for erase and program operations in flash memory, leading to inefficiencies and space constraints.

Innovation Solution

A semiconductor device with a selector that chooses between two voltage levels, where a step-up circuit boosts the selected voltage to provide the necessary power for both the drive circuit and internal memory operations, eliminating the need for a separate step-up circuit for flash memory operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a separate step-up circuit is added to supply high voltage for flash memory operations, then the flash memory can perform erase and program operations, but the chip area increases

Engineering Contradiction:

Improveflash memory operation capabilityVSAvoidchip area

Core Design Contradiction:

Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The step-up circuit is designed to serve multiple functions: it can supply high voltage to the flash memory for erase and program operations, and simultaneously supply drive voltage to the external device. This multi-functionality eliminates the need for separate step-up circuits for each purpose, thereby reducing overall chip area while maintaining full operational capability of the flash memory

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent combines the high-voltage generation function and the drive-voltage generation function into a single integrated step-up circuit. By merging these two functions that were previously handled by separate circuits, the total chip area is reduced while still providing both erase/program capability for flash memory and drive capability for external devices

Inventive Principle:

Principle #5Merging (Combining)

2Adaptability or versatility

If a separate step-up circuit is added for flash memory high voltage supply, then erase and program operations become possible, but manufacturing cost increases

Engineering Contradiction:

Improveflash memory operation capabilityVSAvoidmanufacturing cost

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The step-up circuit is designed to serve multiple functions: it can supply high voltage to the flash memory for erase and program operations, and simultaneously supply drive voltage to the external device. This multi-functionality eliminates the need for separate step-up circuits for each purpose, thereby reducing overall chip area while maintaining full operational capability of the flash memory

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent combines the high-voltage generation function and the drive-voltage generation function into a single integrated step-up circuit. By merging these two functions that were previously handled by separate circuits, the total chip area is reduced while still providing both erase/program capability for flash memory and drive capability for external devices

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces the chip area by integrating voltage generation and distribution efficiently, allowing for reduced chip size and lower costs while maintaining functionality for read, write, and erase operations.

Implementation Method 1

a step-up circuit that, when the first voltage selected by the selector is input, boosts the first voltage to a third voltage and outputs the third voltage as the power supply voltage to the drive circuit and, when the second voltage selected by the selector is inputted, boosts the second voltage to a fourth voltage and outputs the fourth voltage as the power supply voltage to the internal device

Methodology Applied

Scientific EffectVoltage boosting:

Data Source

PatentUS8773938B2Semiconductor device

Publication Date: 2014.07.08 LAPIS SEMICON CO LTD

AI summary

A semiconductor device includes a drive circuit that outputs a drive signal to drive an external device; a voltage output circuit that outputs a first voltage and a second voltage that is larger than the first voltage; a selector that, when supplying a power supply voltage to the drive circuit, selects the first voltage and, when supplying a power supply voltage to an internal device, selects the second voltage; and a step-up circuit that, when the first voltage selected by the selector is input, boosts the first voltage to a third voltage and outputs the third voltage as the power supply voltage to the drive circuit and, when the second voltage selected by the selector is inputted, boosts the second voltage to a fourth voltage and outputs the fourth voltage as the power supply voltage to the internal device.