Semiconductor Wafer Bonding Stress Distribution
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Solution Overview
Problem
The existing semiconductor apparatuses face cracking issues due to uneven stress distribution when stacked, particularly when metal pads are not disposed in regions parallel to the cleavage plane, leading to increased bonding strength challenges.
Innovation Solution
The semiconductor apparatus is designed with a specific arrangement of bonded portions between circular ranges on the bonding face, ensuring that any straight line passing through these ranges intersects at least one bonded portion, thereby distributing stress more evenly and reducing the likelihood of cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If metal pads are not disposed in regions parallel to the cleavage plane, then the bonding process is simpler, but the semiconductor component is more likely to crack due to uneven stress distribution
Solution Approach 1:
The patent applies local quality by creating specific regions with different properties: regions with metal pads (thinner insulating film) and regions without metal pads (thicker insulating film). The bonded portions are strategically placed in the thicker insulating film regions to distribute stress evenly, preventing cracks while maintaining manufacturing simplicity.
Solution Approach 2:
The bonding face is segmented into multiple discrete bonded portions rather than a continuous bonding layer. Each bonded portion is independently positioned in the thicker insulating film region, which divides the stress distribution and prevents crack propagation across the entire bonding interface.
2Stability of the object's composition
If bonded portions are placed in regions without metal pads, then stress distribution is improved, but the bonding area is reduced
Solution Approach 1:
The patent uses partial action by placing bonded portions only in specific regions (thicker insulating film regions) rather than covering the entire bonding face. This partial placement is sufficient to achieve the stress distribution goal while maintaining adequate bonding area through the distributed arrangement of multiple bonded portions.
Solution Approach 2:
The patent transitions from considering only the two-dimensional bonding area to incorporating the third dimension (insulating film thickness) as a critical factor. By placing bonded portions in regions with greater thickness, the patent utilizes the vertical dimension to improve stress distribution while maintaining horizontal bonding area.
3Reliability
If bonded portions are arranged to intersect all straight lines parallel to the cleavage plane, then crack resistance in all directions is improved, but the arrangement complexity increases
Solution Approach 1:
The patent employs asymmetric arrangement of bonded portions that is specifically optimized for the cleavage plane direction. The bonded portions are positioned to intersect all straight lines parallel to the cleavage plane, creating an asymmetric pattern that provides enhanced crack resistance in the critical direction while maintaining reasonable manufacturing complexity.
Data Source
AI summary
A semiconductor apparatus comprises first and second semiconductor component having first and second metal pads, respectively. The first and second semiconductor components are stacked on each other to be bonded to each other at a bonding face. In a plane including the bonding face, first and second ranges each having a circular contour with a diameter of 10 μm or more are definable. None of bonded portions is provided inside of each of the first and second ranges. At least a part of the bonded portions is located between the first and second ranges. The bonded portions are disposed between the first and second ranges such that any straight line passing through the first and second ranges and parallel to a direction connecting centers of the first and second ranges intersects at least one bonded portion of the bonded portions.


