Semiconductor Wafer Plating Support Structure

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional face-down wafer plating methods risk cracking the wafer when electrodes are pressed against its peripheral portion, especially as the wafer thins during the plating process.

Innovation Solution

A semiconductor device structure featuring a first substrate with a device layer and a through hole, supported by a second substrate with a conductive seed layer and an adhesive layer, where the electrodes are pressed against the second substrate rather than the first, preventing direct contact and potential cracking. This structure includes a second outer substrate with a thinner thickness than the second inner substrate, forming a support structure that distributes pressure and maintains wafer integrity during plating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If electrodes are pressed against the peripheral portion of the wafer processing surface in a conventional face-down plating method, then plating can be performed on the wafer, but the wafer may crack when it becomes thinner

Engineering Contradiction:

Improveplating capabilityVSAvoidwafer integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

A support substrate is introduced as an intermediary between the electrodes and the wafer processing surface. The support substrate receives the pressing force from the electrodes during plating, preventing direct contact between electrodes and the thinned wafer, thereby eliminating the cracking risk while maintaining plating capability

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The support substrate is positioned in advance beneath the wafer to provide cushioning support before the plating process begins. This pre-positioned support structure absorbs and distributes the mechanical stress that would otherwise be applied directly to the thinned wafer during electrode pressing

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents cracking of the semiconductor substrate during the plating process by distributing pressure across a thicker support structure, ensuring the integrity of the wafer even as it thins, thereby enhancing manufacturing reliability and reducing the risk of substrate damage.

Implementation Method 1

a second substrate with a conductive seed layer and an adhesive layer

Methodology Applied

Scientific EffectAdhesion: Adhesive

Implementation Method 2

a second substrate with a conductive seed layer

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS10971400B2Semiconductor device, substrate for semiconductor device and method of manufacturing the semiconductor device

Publication Date: 2021.04.06 KIOXIA CORP

AI summary

A semiconductor device includes a device layer having a semiconductor element and a wiring layer, a first structure, a second structure at an outer periphery of the first structure and having a thickness smaller than that of the first structure, and a conductive layer that covers the first structure and the second structure. The first structure comprises a first substrate having the device layer formed on a first surface thereof and a through hole formed through a second surface thereof that is opposite to the first surface to reach the device layer, and an inner portion of a second substrate facing the first surface and bonded to the first surface by a first adhesive layer.