Semiconductor Wire Gate Stack Alignment via Adhesive Layers
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing complex three-dimensional transistor structures, such as those with nanowires, due to increased complexity and precision requirements in processing and alignment, which existing methods have not fully addressed.
Innovation Solution
A method involving the formation of semiconductor device structures with self-aligned trenches and gate stacks, using selective etching processes to precisely position semiconductor wires and gate structures, and the use of adhesive and dielectric layers to ensure accurate alignment and stability during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional transistor structures with nanowires are introduced to replace planar transistors, then functional density is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming adhesive layers on semiconductor wires before subsequent processing steps. This pre-positioning of adhesive layers simplifies the overall manufacturing process by establishing fixed reference points that guide later alignment operations, thereby reducing manufacturing complexity while maintaining high functional density
Solution Approach 2:
The patent introduces adhesive layers as intermediary elements between semiconductor wires and gate structures. These adhesive layers act as mediators that simplify alignment and positioning during manufacturing, reducing the complexity of forming three-dimensional transistor structures while enabling higher functional density
2Manufacturing precision
If selective etching processes are used to precisely position semiconductor features, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The patent employs self-aligned trench formation where the trench positioning is automatically determined by the semiconductor wire locations and adhesive layer patterns. This self-service mechanism achieves high positioning precision without requiring complex external alignment processes, thereby reducing process complexity while maintaining manufacturing precision
3Object-generated harmful factors
If gate stack and contact structures are positioned to minimize overlap, then parasitic capacitance is reduced, but alignment precision requirements increase
Solution Approach 1:
The patent uses adhesive layers as intermediary reference structures that define precise positions for both gate stack and contact structures. These adhesive layers serve as common reference points that simplify the alignment process, enabling accurate positioning with minimal overlap between gate and contact structures, thereby reducing parasitic capacitance without excessively increasing alignment precision requirements
Solution Approach 2:
The patent forms adhesive layers and determines trench positions in advance before forming gate and contact structures. This preliminary establishment of reference positions enables subsequent structures to be accurately positioned with minimal overlap, reducing parasitic capacitance while managing alignment precision requirements through pre-planned positioning
Data Source
AI summary
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a dielectric layer. The semiconductor device structure also includes a gate stack structure in the dielectric layer. The semiconductor device structure further includes a semiconductor wire partially surrounded by the gate stack structure. In addition, the semiconductor device structure includes a contact electrode in the dielectric layer and electrically connected to the semiconductor wire. The contact electrode and the gate stack structure extend from the semiconductor wire in opposite directions.