Semiconductor Wiring Adhesion via Oxide Removal and Passivation
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices face issues with the growth of a plating film due to oxide films on the wiring layer, leading to insufficient adhesion and potential separation during wire bonding, caused by redeposition of carbon from the passivation film during dry etching.
Innovation Solution
A method that involves forming a first opening in the oxide film by dry etching, followed by the growth of a plating film through a second opening in the passivation film, ensuring improved adhesion between the wiring layer and the plating film, and optimizing the sputtering temperature and etching time to enhance crystal orientation and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching is performed to remove the oxide film from the wiring layer, then the oxide film is removed, but carbon from the passivation film is redeposited onto the wiring layer
Solution Approach 1:
The patent applies preliminary action by forming the first opening in the oxide film through dry etching before forming the passivation film. This sequence ensures that the oxide film is removed in advance, and the subsequent passivation film formation does not cause carbon redeposition on the exposed wiring layer, as the wiring layer is protected by the passivation film afterward.
Solution Approach 2:
The patent segments the opening formation process into two distinct stages: first forming an opening in the oxide film, then forming a separate passivation film with its own opening. This segmentation allows the oxide removal and plating film formation to occur at different times, preventing carbon redeposition during the critical plating stage.
2Reliability
If the oxide film remains on the wiring layer, then the wiring layer is protected, but the plating film cannot grow properly on the wiring layer
Solution Approach 1:
The patent removes the oxide film in advance through dry etching before the passivation film is formed. This preliminary removal ensures that when the plating film is subsequently grown through the opening in the passivation film, the wiring layer surface is clean and free of oxide, enabling proper plating film adhesion and growth.
Solution Approach 2:
The patent introduces the passivation film as an intermediary structure that allows selective access to the wiring layer. The passivation film with its opening serves as a mediator that protects the wiring layer from carbon redeposition while still allowing the plating film to reach and adhere to the cleaned wiring layer surface.
3Ease of manufacture
If the plating film adhesion is insufficient, then the manufacturing process is simpler, but the plating film separates from the wiring layer during wire bonding
Solution Approach 1:
The patent applies preliminary action by removing the oxide film through dry etching before the plating film formation stage. This pre-cleaning of the wiring layer surface ensures optimal adhesion conditions for the plating film, preventing separation during subsequent wire bonding operations while maintaining a straightforward manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the adhesion between the wiring layer and the plating film, reduces defect occurrence in the plating film, and ensures uniform coverage, thereby enhancing the reliability and performance of the semiconductor device.
Implementation Method 1
a portion of the oxide film is removed by dry etching to form, in the oxide film, a first opening for exposing therefrom a portion of the wiring layer
Implementation Method 2
A wiring layer is formed by patterning a material configuring the wiring layer formed by sputtering or the like
Implementation Method 3
During ashing, the surface of the wiring layer is oxidized. The wiring layer has therefore a surface covered with the resulting oxide film
Data Source
AI summary
To provide a semiconductor device capable of having improved adhesion between a plating film and a wiring layer. A method of manufacturing the semiconductor device includes a step of forming a wiring layer having a surface covered with an oxide film, a step of removing a portion of the oxide film by dry etching to form, in the oxide film, a first opening for exposing a portion of the wiring layer, a step of forming a passivation film covering the wiring layer, is provided with a second opening communicated with the first opening, and is made of an insulating resin material, and a step of growing a plating film on the wiring layer exposed from the first and second openings.