Semiconductor/Solid-State Device Details TRIZ Cases

An IC chip overhang and ball grid array structure direct underfill material flow around solder elements.

Stacked semiconductor dies connect through conductive vias in a photosensitive dielectric layer.

Overhung chip portions create wire-bonding space, eliminating spacers to reduce package thickness and prevent short circuits.

Segmented cold plates cool inverter power modules via fluid flow, isolating leakage risks to improve reliability.

A high-k ferroelectric layer acts as an etch stop to enable direct via placement on the embedded DRAM capacitor.

Ion implantation converts a chalcogenide layer into an insulator, eliminating etching steps that damage memory cells and reduce reliability.

Selective copper plating on leadframe die pads improves EMC adhesion while reducing manufacturing complexity and delamination risks.

A semiconductor device uses a modified insulating layer to enhance adhesiveness between wirings and substrate.

Segmented alignment keys determine layer overlay states to resolve manufacturing precision trade-offs in color conversion display devices.

A carrier with edge and inner terminal pads connects and encapsulates an integrated circuit die to enable flexible stacking configurations.

Panel-shaped metal layer bonded to grid walls conducts heat from integrated circuit chips, resolving thermal dissipation challenges in high-density packages.

Three-dimensional stacking of metallized ceramic supports reduces thermomechanical stress while improving thermal management capability.

Self-limiting alignment marks on spacer substrates facilitate precise composite structure bonding, resolving low yield challenges in MEMS packaging.

Segmented dielectric layers and a grid-filled scribe line trench prevent interface de-lamination in low-k structures.

A semiconductor manufacturing method applies a protective film precursor before dicing to ensure surface coverage during element separation.

Segmenting the support circuitry onto a separate substrate prevents thermal degradation while routing signals through the memory die.

A multichip discrete package uses a metal plate attached to extended die attach pad side portions to form a second mounting surface for additional dies.

A conductive coupling element bridges chip terminals and leads to reduce wire bonding length.

A laser ablation tape exposes bond pads via laser drilling to enable precise solder paste deposition and reflow.

Direct heat spreader attachment improves dissipation while grinding replaces laser removal for faster manufacturing.

A semiconductor package incorporates a heat-blocking structure with voids to isolate adjacent chips.

A 3D memory stack uses a common source line penetrating an upper substrate through hole to connect peripheral circuits.

A printable diode suspension enables direct ink deposition of semiconductor components onto substrates.

Thermal treatment expands metal pad volume via impurity diffusion to prevent dishing and ensure flat bonding interfaces.

Fusing a molded dielectric preform to a conductive ceramic base creates a hermetic seal that avoids expensive multi-layer co-firing complexity.

Alternating conductive bumps at different vertical levels prevent short-circuits during reflow bonding in stacked semiconductor packages.

Removes titanium liner to prevent oxygen gettering, reducing contact resistance and void formation in semiconductor devices.

Mechanical pressing replaces wet etching to reduce stress and deformation in high-density semiconductor packaging.

A power semiconductor module uses an adhesive-filled tapered case portion to secure bonding.

An electroformed wiring component creates vertical conductive pathways, eliminating complex through-electrode techniques and reducing manufacturing costs.

A package structure uses a covering layer with recesses to expose conductive contacts for flexible wiring layouts.

Uniform pressure distribution via an intermediary fin set prevents vapor chamber deformation while ensuring strong thermal attachment.

Dry etching removes oxide films from wiring layers before passivation deposition, preventing carbon redeposition that causes plating film separation.

Plasma-treated defect prevention films with optimized silicon bond ratios protect interlayer wiring structures.

Interleaved pad arrangement distributes bond wires evenly, preventing voids and wire sweep during repackaging.

A silicon dioxide thin film serves as an intermediary mask for dry etching non-photosensitive polyimide layers.

Local under bump metal capacitors decouple power distribution networks, suppressing mid-frequency noise and cross-talk without increasing package size.

Bending wires connect bridge die pads to integrated circuits, accommodating larger horizontal distances without enlarging the bridge die size.

Selective metal film on the lead inner portion suppresses resin peeling caused by thermal stress during wide temperature operation.

Vertical stacking of separate power and control packages reduces footprint while enabling customized circuit configurations.

An indium oxide film coats indium bumps to suppress deformation, preventing pixel short circuits in photodetection devices.

A memory device bonding pad structure uses a mesh buffer layer to relieve stress during upper conductor bonding.

Selective epitaxial growth forms thicker conductive pads on polysilicon channel layers in 3D stacked semiconductor structures.

A mother integrated circuit uses mask-programmable interconnects to configure through die vias within interface tiles.

Ion irradiation modifies insulating layer surfaces to enhance adhesion, preventing bond wire lift-off and heel cracks during temperature cycling.

Stress relieving regions in the base layer improve tunnel barrier flatness, suppressing in-plane currents and enhancing durability.

Inner lead pattern selects signal paths via IC chip alignment to enable multiple operation modes without increasing package thickness.