Defect Prevention Films for TDDB Reliability in Semiconductor Devices
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Solution Overview
Problem
In semiconductor devices with multi-layer wiring structures, ensuring reliability against Time Dependent Dielectric Breakdown (TDDB) between wirings in different layers is challenging due to the miniaturization of electronic devices, where increasing wiring spacing is not feasible, and existing methods do not effectively address the reliability across varying voltage polarities.
Innovation Solution
The semiconductor device incorporates a first and second defect formation preventing film with specific infrared absorption ratios between silicon and hydrogen and silicon and oxygen bonds, formed through plasma treatment of interlayer insulating films, to enhance the reliability of TDDB between first and second wirings by suppressing defect formation regardless of voltage polarity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the interlayer insulating film thickness is reduced to enable device miniaturization, then the device size is reduced, but the TDDB reliability between wirings in different layers deteriorates
Solution Approach 1:
The patent applies local quality by forming defect formation preventing films with specific material characteristics (lower Si-H/Si-O abundance ratio) at critical interfaces between wirings in different layers. This localized modification of film properties at the interface region prevents defect formation and improves TDDB reliability without increasing the overall device size, thus resolving the contradiction between miniaturization and reliability.
2Reliability
If wiring spacing is increased to improve TDDB reliability between wirings in the same layer, then the TDDB reliability is improved, but the device area increases
Solution Approach 1:
The patent applies local quality by introducing defect formation preventing films with optimized material properties (lower Si-H/Si-O abundance ratio) at specific interfaces between wirings in different layers. This localized intervention improves TDDB reliability without requiring increased wiring spacing, thereby maintaining compact device area while enhancing reliability.
3Manufacturing precision
If conventional plasma treatment is applied to interlayer insulating films, then the film quality is improved, but defect formation occurs due to high Si-H bond content
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition of the interlayer insulating film, specifically reducing the Si-H/Si-O abundance ratio through controlled plasma treatment conditions. This parameter modification prevents defect formation while maintaining film quality, resolving the contradiction between manufacturing precision and harmful defect generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves the reliability of TDDB between wirings in different layers by forming defect prevention films with lower abundance ratios of silicon-hydrogen to silicon-oxygen bonds, thereby extending the lifetime and reducing defect formation under various voltage conditions.
Implementation Method 1
A first plasma treatment is performed on the first insulating film to form a first defect formation preventing film. A second plasma treatment is performed on the second interlayer insulating film to form a second defect formation preventing film.
Implementation Method 2
The ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to the infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio.
Data Source
AI summary
In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film.