Semiconductor Multilayer Wiring Insulation with Modified Interface Layers
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Solution Overview
Problem
Current semiconductor technologies face challenges in achieving low capacitance between wirings while maintaining high adhesiveness and insulation reliability, as existing methods for forming modified layers often result in increased dielectric constant and leakage current.
Innovation Solution
A semiconductor device with a modified layer formed on interfaces between insulating films and metal, featuring a siloxane structure with fewer carbon atoms and more oxygen atoms per unit volume, which improves adhesiveness and insulation properties by forming a thin, high-density layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a modified layer is formed by subjecting an organosiloxane film to plasma treatment to enhance adhesiveness, then adhesiveness is improved, but dielectric constant increases and leakage current deteriorates
Solution Approach 1:
The patent applies different treatments to different regions of the organosiloxane film. The side faces are subjected to plasma treatment to form a modified layer with enhanced adhesiveness, while the top face is coated with an insulative barrier film to prevent leakage current. This local differentiation allows each region to have optimized properties for its specific function.
Solution Approach 2:
The patent divides the protective structure into multiple segments: a barrier metal film on the side face and bottom face for adhesion and diffusion prevention, and an insulative barrier film on the top face for electrical insulation. This segmentation allows each layer to perform its specific function without compromising the others.
2Object-generated harmful factors
If an insulating film with low dielectric constant is used to decrease capacitance between wirings, then capacitance is reduced, but adhesiveness and insulation reliability deteriorate
Solution Approach 1:
The patent uses a composite structure combining an organosiloxane film (for low dielectric constant and low capacitance) with plasma-modified regions and insulative barrier film coatings (for enhanced adhesiveness and insulation reliability). This composite approach allows the system to achieve low capacitance while maintaining high reliability through the synergistic combination of different material properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively lowers leakage current and maintains low capacitance between wirings, enhancing insulation reliability and adhesiveness, thereby improving the performance of multilayer wiring structures.
Implementation Method 1
Japanese Patent Laid-Open No. 2003-309173 discloses a technology of forming a modified layer by subjecting an organosiloxane film to NF3 plasma treatment and enhancing the adhesiveness.
Implementation Method 2
a modified layer containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and the second insulating film
Data Source
AI summary
The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.