Semiconductor External Wiring Contact Width for Thermal Fatigue Reduction
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Solution Overview
Problem
Conventional semiconductor devices experience thermal fatigue and non-uniform temperature distribution in the junction portion of external wiring, leading to reduced long-term reliability due to the alternating arrangement of transistor and diode portions with varying widths.
Innovation Solution
A semiconductor device design where the transistor and diode portions are alternately arranged with specific width ratios, and the external wiring has a contact width larger than both, overlapping the boundary between them, to ensure uniform heat distribution and reduce thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If external wiring is joined to the surface electrode at the central portion, then the contact area is larger, but thermal fatigue increases due to non-uniform temperature distribution
Solution Approach 1:
The patent applies asymmetry by positioning the external wiring to overlap the boundary between transistor and diode portions rather than the central portion. This asymmetric positioning exploits the different thermal characteristics of adjacent regions to achieve more uniform temperature distribution at the junction, reducing thermal fatigue while maintaining adequate contact area.
Solution Approach 2:
The patent applies local quality by making the contact width of the external wiring larger than the width of individual transistor or diode portions, allowing the wiring to span across the boundary region. This creates a localized configuration where the wiring contacts both types of portions, utilizing their complementary thermal behaviors to achieve uniform temperature distribution.
2Adaptability or versatility
If transistor and diode portions are alternately arranged with different widths, then device functionality is optimized, but non-uniform temperature distribution occurs in the junction portion
Solution Approach 1:
The patent applies parameter changes by adjusting the contact width of the external wiring to be larger than the width of individual transistor or diode portions. This parameter adjustment allows the wiring to span across the boundary, utilizing the different thermal parameters of adjacent regions to achieve uniform temperature distribution while maintaining the alternating arrangement for device functionality.
Solution Approach 2:
The patent applies the intermediary principle by using the boundary region between transistor and diode portions as a mediator for heat distribution. The external wiring positioned at this boundary acts as an intermediary that contacts both types of portions, allowing thermal energy to be distributed more uniformly across the junction area.
3Reliability
If external wiring contact width is reduced, then thermal stress is concentrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies partial or excessive action by making the contact width of the external wiring larger than necessary to contact a single portion, extending it to span across the boundary between transistor and diode portions. This excessive width provides a larger tolerance margin for positioning while achieving the thermal stress distribution benefit.
Solution Approach 2:
The patent applies segmentation by dividing the contact region into segments that overlap different functional portions (transistor and diode portions). This segmentation allows the external wiring to interact with multiple regions, distributing thermal stress while the overall contact width provides positioning tolerance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances long-term reliability by minimizing thermal fatigue and achieving uniform temperature distribution across the semiconductor device, even under varying operational conditions.
Implementation Method 1
a temperature difference between a transistor portion and a diode portion is small. Therefore, thermal fatigue in a junction portion can be reduced, and long-term reliability can be enhanced
Data Source
AI summary
A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.