3D Semiconductor Wiring Layout for Low-Capacitance Dense Interconnects
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Solution Overview
Problem
There is a need for semiconductor devices with improved performance and reliability, particularly in reducing capacitance between contacts, enhancing heat dissipation, and ensuring electrical stability as pitch sizes decrease.
Innovation Solution
The semiconductor device includes a support substrate with a bonding layer, frontside and backside wiring structures, source/drain patterns, and vias that are designed to enhance electrical connectivity and reduce overlap, utilizing conductive materials and insulating films to optimize electrical pathways.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the pitch size of semiconductor devices is decreased to increase density, then device density is improved, but capacitance between contacts increases and electrical stability deteriorates
Solution Approach 1:
The patent transitions from planar wiring to three-dimensional stacked wiring structures, utilizing vertical stacking to increase device density while maintaining electrical stability through controlled spacing and shielding in the vertical dimension
2Productivity
If the pitch size of semiconductor devices is decreased to increase density, then device density is improved, but heat dissipation becomes more difficult
Solution Approach 1:
The patent segments heat dissipation pathways by introducing separate thermal management structures and spacing arrangements that create dedicated thermal conduction channels, allowing heat to be efficiently dissipated even in high-density three-dimensional configurations
3Reliability
If wiring structures are optimized to reduce capacitance, then electrical stability is improved, but device complexity increases
Solution Approach 1:
The patent implements wiring structures that simultaneously serve multiple functions: signal transmission, capacitance reduction through spacing, and thermal management, thereby achieving electrical stability without proportionally increasing device complexity
Data Source
AI summary
A semiconductor device includes a support substrate; a bonding layer on the support substrate; a first frontside wiring structure on the bonding layer; a second frontside wiring structure on the bonding layer, wherein the second frontside wiring structure is spaced apart from the first frontside wiring structure in a first direction; a frontside wiring pattern on the first frontside wiring structure and the second frontside wiring structure, wherein the frontside wiring pattern extends in the first direction; a frontside source/drain contact on the frontside wiring pattern; a source/drain pattern on the frontside source/drain contact; a backside wiring pattern on the source/drain pattern; a backside wiring structure on the backside wiring pattern; and a first via extending into the bonding layer, wherein the first via is in contact with the second frontside wiring structure, wherein the first via overlaps the second frontside wiring structure in a second direction.