Non-Volatile Memory Sense Amplifier With Voltage Boosted Readout
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Solution Overview
Problem
Existing sense amplifiers in non-volatile memory face challenges in accurately determining the storage state of memory cells due to variations in cell current magnitude, leading to potential misjudgments and prolonged sensing times.
Innovation Solution
A sense amplifier design incorporating a first switching device, a voltage boosting circuit, and a comparator, which includes a reset phase, charge phase, and boost phase to adjust sensing voltages, enabling precise determination of storage states by boosting data line voltages and using comparison voltages to generate output data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional sense amplifier is used to read memory cell data, then the sensing operation can be completed, but the sensing time is prolonged and misjudgments may occur due to variations in cell current magnitude
Solution Approach 1:
The sense amplifier performs preliminary actions by pre-charging the data line to a reference voltage level before the actual sensing operation. This preliminary setup ensures that the data line is ready to rapidly respond to cell current variations, reducing the overall sensing time while improving measurement precision through controlled initial conditions
Solution Approach 2:
The sense amplifier employs dynamic voltage adjustment by switching between different voltage levels (VDDL, VDDH, VSS) based on the sensing phase. The data line voltage is dynamically adjusted during the sensing operation to optimize the detection window, allowing faster and more accurate state determination by adapting the voltage conditions to the specific sensing requirements
2Measurement precision
If the data line voltage is kept at a high level to maintain larger cell currents, then the sensing accuracy improves, but the power consumption increases and the sensing node charging becomes less efficient
Solution Approach 1:
The sense amplifier uses periodic voltage switching on the data line, alternating between high voltage levels (VDDL, VDDH) during specific sensing phases and lower levels during others. This periodic action maintains larger cell currents only when needed for accurate detection while reducing power consumption during non-sensing phases, achieving both accuracy and energy efficiency through time-multiplexed voltage control
Solution Approach 2:
The sense amplifier changes the voltage parameter of the data line dynamically based on the sensing phase and detected signal characteristics. By adjusting the data line voltage between different levels (VSS, VDDL, VDDH) rather than maintaining a constantly high voltage, the system achieves accurate cell current detection only when necessary while minimizing overall power consumption through parameter optimization
3Measurement precision
If the sensing voltage is increased to boost the cell current signal for better detection, then the measurement precision improves, but the device complexity increases due to additional voltage boosting circuits
Solution Approach 1:
The data line serves multiple functions: it acts as both the signal transmission medium for memory cell data and as the voltage boosting mechanism itself. By utilizing the data line's inherent capacitance and switching capability, the circuit amplifies the sensing signal without requiring separate dedicated boosting circuits, thereby improving measurement precision while maintaining device simplicity through multi-functional design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design enhances the accuracy and speed of state determination in non-volatile memory cells, reducing misjudgments and ensuring timely sensing by maintaining larger cell currents and efficiently charging sensing nodes.
Implementation Method 1
the sensing voltage is adjusted to the data line voltage under control of the first voltage boosting circuit
Implementation Method 2
A first terminal of the first switching device is connected with the data line. A second terminal of the first switching device is connected with a ground terminal
Data Source
AI summary
A sense amplifier for a non-volatile memory is provided. A first memory cell of the non-volatile memory is coupled to a data line. The sense amplifier includes a first switching device, a first voltage boosting circuit and a comparator. A first terminal of the first switching device is connected with the data line. A second terminal of the first switching device is connected with a ground terminal. A control terminal of the first switching device receives a reset signal. An input terminal of the first voltage boosting circuit is connected with the data line. An output terminal of the first voltage boosting circuit is connected with a sensing node. A first input terminal of the comparator receives a comparison voltage. A second input terminal of the comparator is connected with the sensing node. An output terminal of the comparator generates an output data.