Sense Amplifier Controller Maintains Memory Cell Connection
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Solution Overview
Problem
Conventional semiconductor memory devices experience high power consumption due to repeated toggling of separation signals between memory cell arrays and bit line sense amplifiers, leading to inefficient high voltage generation and increased current consumption.
Innovation Solution
A semiconductor memory device with a bit line sense amplifier block array that selectively connects only one memory cell array to the bit line sense amplifier in response to an active command, maintaining this connection even during precharge operations, thereby reducing toggling and current consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If separation signals are repeatedly toggled to switch between memory cell arrays and bit line sense amplifiers, then memory cell array switching is achieved, but power consumption increases due to inefficient high voltage generation
Solution Approach 1:
The patent applies preliminary action by maintaining the connection state of the bit line sense amplifier block array with the previously selected memory cell array in advance, so that when a precharge command is received, the connection is already established and no additional toggling is needed. This reduces the frequency of separation signal transitions and thereby reduces power consumption associated with high voltage generation.
Solution Approach 2:
The patent implements continuity of useful action by keeping the bit line sense amplifier block array connected to the previously selected memory cell array continuously during precharge operations. This eliminates unnecessary disconnection and reconnection cycles, maintaining a stable connection state that reduces power consumption while still allowing the sense amplifier to perform its sensing function.
2Ease of operation
If separation signals are toggled frequently to release and establish connections, then memory cell array selection is achieved, but current consumption increases
Solution Approach 1:
The controller maintains the connection state in advance by not releasing the connection when a precharge command is received, provided that a new active command has not been received. This preliminary maintenance of connection state reduces the frequency of separation signal toggling and thereby reduces current consumption.
Solution Approach 2:
The connection between the bit line sense amplifier block array and the memory cell array is maintained continuously during precharge operations, eliminating unnecessary interruption and re-establishment of the connection. This continuous connection reduces the number of separation signal transitions and associated current consumption.
3Adaptability or versatility
If the connection is released during precharge commands, then memory cell array switching is enabled, but toggling increases and reduces efficiency
Solution Approach 1:
The controller determines in advance whether to maintain or release the connection based on whether a new active command has been received. By maintaining the connection during precharge operations when no new active command is present, the system performs the connection maintenance action in advance, reducing unnecessary toggling and improving operational efficiency.
Solution Approach 2:
The connection state is maintained continuously during precharge commands to eliminate unnecessary disconnection and reconnection cycles. This continuous useful action reduces toggling frequency and improves operational efficiency while maintaining the capability to switch memory cell arrays when needed.
Data Source
AI summary
A semiconductor memory device includes a bit line sense amplifier block array, upper and lower memory cell arrays and a sense amplifier controller. The bit line sense amplifier block array senses and amplifies data of a memory cell array. The upper and the lower memory cell arrays are respectively connected to upper and lower sides of the bit line sense amplifier block array and store the data in the memory cell array. The sense amplifier controller selectively connects one of the upper and lower memory cell arrays to the bit line sense amplifier block array in response to an active command, and releases the connection when a corresponding one of the upper and lower memory cell arrays are not selected but overdriven.