Sense Amplifier Current Mirror Pre-Amplification Offset Noise
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Solution Overview
Problem
Sense amplifiers in semiconductor memory technologies face errors during data reading due to abnormal amplification, leading to performance issues caused by offset noise and small voltage differences between bit lines.
Innovation Solution
A sense amplifier with an amplification module and a control module that configures current mirror structures and diode structures to pre-amplify non-read bit line voltages in opposite directions, ensuring effective voltage distinction and amplification, and compensates for offset noise by switching configurations during different phases of data reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional sense amplifier amplification is used, then data reading is performed, but offset noise causes amplification errors and reduced reading accuracy
Solution Approach 1:
The patent applies preliminary action by performing pre-amplification of the non-read bit line voltage before the main amplification operation. The control module configures the amplification module to include a current mirror structure that pre-amplifies the reference bit line voltage in the opposite direction during a first amplification phase, preparing the voltage levels before the actual data reading amplification, thereby improving reading accuracy and reducing offset noise effects.
2Device complexity
If simple amplification structure is used, then device complexity is low, but offset noise cannot be effectively compensated
Solution Approach 1:
The patent applies dynamics by making the amplification module reconfigurable through the control module. The amplification module can dynamically switch between different configurations: a first current mirror structure for pre-amplification and a second current mirror structure for offset compensation. This dynamic reconfiguration allows the same hardware to perform multiple functions (pre-amplification, main amplification, offset compensation) without requiring separate dedicated circuits for each function.
Solution Approach 2:
The patent applies universality by designing the amplification module to serve multiple functions through configuration control. The same amplification module, when controlled by the control module, can perform pre-amplification of the non-read bit line, main data amplification, and offset noise compensation. This multi-functionality reduces the need for separate dedicated circuits while maintaining comprehensive noise compensation capabilities.
3Adaptability or versatility
If dual bit line reading is supported, then memory access flexibility is improved, but voltage distinction between bit lines becomes difficult
Solution Approach 1:
The patent applies preliminary anti-action by pre-amplifying the non-read bit line voltage in the opposite direction before the main amplification operation. When reading from one bit line, the other bit line's voltage is pre-adjusted in the opposite direction, creating a larger voltage differential between the two bit lines. This preliminary counter-action ensures that even when dual bit line reading is supported, the voltage distinction between bit lines remains clear and easily detectable during the amplification process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves data reading accuracy and overall semiconductor memory performance by effectively distinguishing and amplifying bit line voltages, reducing read errors and offset noise influences.
Implementation Method 1
the control module is configured to configure the amplification module to include a first current mirror structure and connect a mirror terminal of the first current mirror structure to the second bit line. When the data in the storage unit on the second bit line is read, in the first amplification phase of the sense amplifier, the control module is configured to configure the amplification module to include a second current mirror structure and connect a mirror terminal of the second current mirror structure to the first bit line
Implementation Method 2
the function of the sense amplifier is to obtain a voltage difference between the read bit line BL and the reference bit line BLB and amplify the voltage difference between the two bit lines
Data Source
AI summary
A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module configured to read data in a storage unit on a first or second bit line; a control module electrically connected to the amplification module. When data in the storage unit on the first bit line is read, in a first amplification phase of the sense amplifier, the control module configures the amplification module to include a first current mirror structure and connects a mirror terminal of the first current mirror structure to the second bit line; when data in the storage unit on the second bit line is read, in the first amplification phase of the sense amplifier, the control module configures the amplification module to include a second current mirror structure and connects a mirror terminal of the second current mirror structure to the first bit line.