Sense Amplifier Latch Layout for Low-Power NAND Memory Readout
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Solution Overview
Problem
Existing semiconductor memory devices, particularly NAND flash memories, face challenges in optimizing the configuration and operation of sense amplifiers to enhance data reading and writing efficiency and reduce power consumption.
Innovation Solution
The semiconductor memory device incorporates a novel configuration of sense amplifiers with shared transistors and capacitive elements, allowing for efficient data transfer and reduced power consumption by optimizing the layout and electrical connections of sense amplifier units and latch circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional sense amplifier configurations are used in NAND flash memory, then basic data reading and writing functions are maintained, but data reading and writing efficiency is limited and power consumption is higher
Solution Approach 1:
The patent merges the sense amplifier and latch circuit into a unified structure where the sense amplifier includes integrated transistor components (first transistor, second transistor, third transistor, fourth transistor) that function as both sense amplification and latch elements. This consolidation eliminates the need for separate latch circuit components, reducing overall power consumption while maintaining data reading and writing efficiency through the coordinated operation of the integrated transistor network.
Solution Approach 2:
The sense amplifier is designed with multi-functional transistor components that perform multiple operations: the first and second transistors handle data transfer between bit lines and internal nodes, the third and fourth transistors enable latch functionality for data storage, and all transistors participate in sense amplification. This universal design allows a single circuit block to perform reading, writing, and data holding functions, improving productivity while reducing the power overhead of separate dedicated circuits.
2Productivity
If sense amplifiers are optimized for high-speed data transfer, then data reading and writing efficiency improves, but circuit complexity increases
Solution Approach 1:
The patent combines sense amplification and latch functions into a single integrated circuit block, eliminating the need for separate latch circuits. The sense amplifier includes four transistors that collectively perform both sense amplification and data latching operations, thereby reducing overall circuit complexity while maintaining high-speed data transfer capabilities through efficient signal processing pathways.
Solution Approach 2:
Each transistor in the sense amplifier is designed to serve multiple functions: data transfer, sense amplification, and latch operations. This multi-functional design reduces the total number of components required compared to conventional separate sense amplifier and latch circuit implementations, simplifying the overall device architecture while enabling high-speed data operations through coordinated transistor switching.
Data Source
AI summary
A semiconductor memory device includes a first memory cell transistor, a first bit line electrically coupled to the first memory cell transistor, a first sense amplifier, and a first latch circuit. The first sense amplifier includes a first node coupled to the first bit line, a first transistor including one end electrically coupled to the first latch circuit, a second node coupled to a gate of the first transistor, and a second transistor coupled between the first and second nodes. The second transistor is in an ON state during an operation of transferring a charge from the first bit line to the first and second nodes in accordance with data of the first memory cell transistor. The second transistor is in an OFF state during an operation of transferring data of the second node to the first latch circuit.