Sense Amplifier Mapping for Non-Volatile Memory Peripheral Area Reduction

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Solution Overview

Problem

Current semiconductor memory systems face challenges in reducing the area required by peripheral circuitry, which hinders the miniaturization and performance enhancement of non-volatile memory devices, particularly in 3D stacked memory arrays.

Innovation Solution

Implementing improved mapping and control schemes for data transfer between sense amplifier circuitry and memory cache circuitry, utilizing a configuration with M-tier sense amplifiers and N-tier data latches, where M is less than N, to optimize data path circuitry and control signals, thereby reducing the spatial requirements of peripheral circuitry.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If traditional 1:1 mapping between sense amplifier tiers and data latch tiers is used, then data transfer control is simplified, but peripheral circuitry area is increased

Engineering Contradiction:
Improveperipheral circuitry areaVSAvoiddata transfer control complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent transitions from a traditional 1:1 tier mapping to an M:N tier mapping where M (sense amplifier tiers) is less than N (data latch tiers). This dimensional change in the mapping relationship allows multiple data latch tiers to share fewer sense amplifier tiers, reducing the overall peripheral circuitry area while managing complexity through hierarchical control structures.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent merges multiple data latch tiers under a single sense amplifier tier by implementing shared control logic and data paths. This consolidation reduces the total number of independent circuit blocks needed, thereby decreasing peripheral circuitry area while maintaining functional separation through logical control mechanisms.

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If more sense amplifier tiers are used, then data transfer capability is improved, but chip area is increased

Engineering Contradiction:
Improvedata transfer capabilityVSAvoidchip area
Core Design Contradiction:
ProductivityVSArea of moving object

Solution Approach 1:

The patent implements multi-functionality by allowing sense amplifier tiers to serve multiple data latch tiers simultaneously. Each sense amplifier tier is designed to handle data transfer operations for multiple corresponding data latch tiers, increasing data transfer capability without proportionally increasing the number of sense amplifier tiers and thus limiting chip area growth.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Area of stationary object

If M-tier sense amplifiers and N-tier data latches are used with M<N, then peripheral circuitry area is reduced, but data path circuitry complexity is increased

Engineering Contradiction:
Improveperipheral circuitry areaVSAvoiddata path circuitry complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent segments the data transfer function into hierarchical levels: sense amplifier tiers handling higher-level data operations and data latch tiers handling lower-level storage operations. This segmentation allows the M:N mapping to reduce area while distributing complexity across different hierarchical levels rather than concentrating it in a single layer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces intermediary control structures that mediate between the reduced number of sense amplifier tiers and the larger number of data latch tiers. These intermediary elements manage the increased data path complexity by providing standardized interfaces and control protocols that simplify the overall system architecture despite the M<N mapping.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS11651800B2Sense amplifier mapping and control scheme for non-volatile memory
Publication Date: 2023.05.16 SANDISK TECHNOLOGIES LLC
  • US11651800B2 patent drawing
  • US11651800B2 patent drawing
  • US11651800B2 patent drawing

AI summary

A data storage includes a memory array including a plurality of memory cells, and peripheral circuitry disposed underneath the memory array. The peripheral circuitry includes an M-tier sense amplifier (SA) circuit including X stacks of SA latches, wherein each SA latch is respectively coupled to a bit line of a memory cell of the plurality of memory cells; and an N-tier memory cache data (XDL) circuit including Y stacks of XDL latches, wherein M is less than N, and X is greater than Y. The peripheral circuitry further includes data path circuitry coupling (i) each SA latch of the X stacks of SA latches to (ii) a respective XDL latch of the Y stacks of XDL latches.