Sense Amplifier for Semiconductor Memory Utilizing All Cells
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Solution Overview
Problem
The open bit line structure in semiconductor memory devices results in half of the memory cells in the outmost memory cell array being dummy cells, leading to area loss and increased cost due to unused memory cells.
Innovation Solution
A sense amplifier with a reference signal providing unit and internal sense amplification unit, along with a connection controller, is used to sense and amplify data signals from the outmost memory cell array in the open bit line structure, minimizing mismatch between bit lines and inverted bit lines, thereby utilizing all memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the open bit line structure is used, then the bit line pitch is improved, but memory cells in the outmost memory cell array become dummy cells leading to area loss
Solution Approach 1:
The sense amplifier is divided into two functional units: a reference signal providing unit that generates reference bit line signals, and an internal sense amplification unit that performs data sensing. This segmentation allows the outmost sense amplifier to independently provide reference signals to all bit lines connected to the outmost memory cell array, enabling all memory cells to be utilized without area loss while maintaining the benefits of the open bit line structure
Solution Approach 2:
The outmost sense amplifier is designed to perform multiple functions: it serves as both a reference signal generator and a data sensing amplifier. By providing reference bit line signals to all bit lines connected to the outmost memory cell array and simultaneously performing data sensing operations, it eliminates the need for dummy memory cells while maintaining area efficiency
2Length of moving object
If the open bit line structure is used, then the bit line pitch is improved, but dummy bit lines are created leading to increased cost
Solution Approach 1:
The sense amplifier is divided into a reference signal providing unit and an internal sense amplification unit, allowing the outmost sense amplifier to independently drive all bit lines in the outmost memory cell array without requiring dummy bit lines, thereby eliminating the associated manufacturing costs while maintaining the compact bit line pitch of the open structure
Solution Approach 2:
The invention changes the operational parameters of the outmost sense amplifier by enabling it to provide reference signals to all bit lines simultaneously. This parameter change allows the system to operate without dummy bit lines, reducing manufacturing complexity and cost while maintaining the area-efficient open bit line structure
Data Source
AI summary
A sense amplifier includes a reference signal providing unit and an internal sense amplification unit. The reference signal providing unit provides a reference bit line signal in response to a reference control signal. The internal sense amplification unit receives the reference bit line signal and data signals that correspond to the data. The received signals are provided through bit lines connected to the memory cell array. The internal sense amplification unit senses the received reference bit line signal and the data signals and amplifies the sensed signals. The sense amplifier senses data stored in memory cells connected to dummy bit lines of the outmost memory cell array of a semiconductor memory device such that the memory cells that are not used can be used. Accordingly, the design area and cost of the semiconductor memory device can be reduced.