Sense Amplifier Voltage Control for Low Power Memory
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Solution Overview
Problem
Semiconductor memory devices in mobile devices consume high power, particularly due to the power consumption of the memory device itself, which is not effectively reduced despite decreases in application processor power consumption.
Innovation Solution
A semiconductor memory device that operates using a first positive supply voltage, a second positive supply voltage with a lower voltage level, and a negative supply voltage, determining a low level of amplified voltage based on the negative supply voltage for data amplification in memory cells, thereby reducing the voltage levels applied to bit lines, complementary bit lines, and word lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional positive supply voltages are used for bit lines and word lines, then normal data sensing and amplification operations can be performed, but power consumption in the semiconductor memory device is high
Solution Approach 1:
The patent changes the voltage parameter from conventional positive supply voltages to a negative supply voltage for determining the low level of amplified voltage in sense amplifiers. This parameter change enables reduced power consumption while maintaining normal data sensing and amplification operations, as the negative supply voltage allows for lower voltage levels on bit lines and word lines without compromising the amplification process
2Use of energy by moving object
If the voltage level of supply voltages is reduced to decrease power consumption, then power consumption is reduced, but the amplification process is affected
Solution Approach 1:
The negative supply voltage acts as an intermediary that enables the sense amplifier to maintain proper amplification function even when bit line and word line voltages are reduced. By using the negative supply voltage to determine the low level of amplified voltage, the system can operate with reduced voltage levels on data lines while preserving the amplification process integrity
Data Source
AI summary
A semiconductor memory device includes a plurality of memory cells, a plurality of word lines and a plurality of bit lines, wherein each memory cell is coupled to a respective word line and bit line. The semiconductor memory device includes a plurality of sense amplifiers, wherein each sense amplifier is coupled to two bit lines. The semiconductor memory device is configured to receive a first positive supply voltage, a second positive supply voltage, and a negative supply voltage, and determine a low level of an amplified voltage based on the negative supply voltage in an operation of amplifying data in a memory cell.