Semiconductor Memory Sense Amplifier Noise Reduction
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Solution Overview
Problem
Semiconductor memory devices are vulnerable to noise during active and precharging operations due to the use of ground voltage for amplification, leading to malfunctions and unnecessary current consumption through leakage paths.
Innovation Solution
A semiconductor memory device with a power supplying controller that supplies a pull-down driving voltage to the bit line pre-sense and main sense amplifiers sequentially, reducing noise and preventing leakage current paths by controlling the power sources during active and precharging operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ground voltage is used for amplification in sense amplifiers during active operation, then the amplification function is achieved, but noise vulnerability increases and malfunctions occur
Solution Approach 1:
The patent changes the voltage parameter from ground voltage (0V) to a dedicated pull-down driving voltage (e.g., -0.7V to -1.2V). This parameter change creates a voltage margin that prevents noise-induced malfunctions while maintaining the amplification function of the sense amplifiers during active operation.
Solution Approach 2:
The patent introduces a power supplying controller as an intermediary component that manages power supply to sense amplifiers. This controller coordinates the timing of power supply between active operation and precharging operation, preventing direct connection of ground voltage during transitions and thereby reducing noise vulnerability.
2Power
If ground voltage is used for amplification in sense amplifiers, then the amplification operation is performed, but unnecessary current consumption occurs through leakage paths
Solution Approach 1:
The patent applies preliminary action by precharging bit lines to a specific voltage level before the precharging operation begins. The power supplying controller ensures that the pull-down driving voltage is already established in sense amplifiers before bit lines are precharged, preventing leakage current paths from forming during the transition phase.
Solution Approach 2:
By changing the voltage parameter from ground voltage to pull-down driving voltage, the patent eliminates the voltage potential difference that causes leakage current during precharging operation, thereby reducing unnecessary energy loss while maintaining amplification capability.
3Device complexity
If ground voltage is used for both sense amplification and precharging operations, then circuit simplicity is maintained, but noise and leakage current problems arise
Solution Approach 1:
The patent segments the power supply function by introducing a dedicated pull-down driving voltage separate from ground voltage. The power supplying controller divides the operation into distinct phases (active operation and precharging operation) with different voltage requirements, improving reliability without excessive complexity increase.
Solution Approach 2:
The patent implements dynamic voltage switching where the sense amplifiers receive different voltage levels depending on the operation phase. During active operation, they receive pull-down driving voltage for noise-resistant amplification; during precharging operation, they are controlled to prevent leakage paths. This dynamic adaptation improves operation stability.
Data Source
AI summary
A semiconductor memory device includes a bit line pre-sense amplifier configured to sense a potential difference between bit line pair and amplify the voltages of the bit line pair based on the sensed potential difference, a bit line main sense amplifier configured to sense a potential difference between the bit line pair and amplify the voltages of the bit line pair to first and second driving voltages based on the sensed potential difference, and a power supplying controller configured to supply the second driving voltage to the bit line pre-sense amplifier and the bit line main sense amplifier.