Sense Amplifier Power Switching for Sensitive Read and High-Voltage Write-Back
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Solution Overview
Problem
Sense amplifiers in memories like ferroelectric random access memory face challenges in meeting both high-sensitivity sensing and high-voltage write-back requirements due to the mismatch between the high write-back voltages and the low withstand voltage of core devices.
Innovation Solution
Implementing a sense amplifier with a switching mechanism that connects different power supply terminals to varying power supplies, allowing for high-voltage write-back while maintaining sensitivity by using thin gate devices that can sense subtle voltage changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a sense amplifier uses a thin gate device to sense subtle voltage differences, then sensing sensitivity is improved, but the withstand voltage decreases
Solution Approach 1:
The sense amplifier dynamically switches between different power supply voltages based on operational mode. During sensing operations, the amplifier operates at a first power supply voltage that enables high sensitivity. During write-back operations, the amplifier switches to a second power supply voltage that provides high withstand voltage capability, thus resolving the contradiction between sensitivity and voltage tolerance
Solution Approach 2:
The invention changes the power supply voltage parameter of the sense amplifier based on the operational stage. By transitioning between different power supply voltages (first power supply for sensing, second power supply for write-back), the system adapts the amplifier's characteristics to match the requirements of each operation mode, simultaneously achieving high sensitivity and high voltage tolerance
2Strength
If a sense amplifier uses an I/O device with high withstand voltage, then voltage tolerance is improved, but sensing sensitivity to subtle voltage differences deteriorates
Solution Approach 1:
The sense amplifier dynamically switches between different power supply voltages based on operational mode. During sensing operations, the amplifier operates at a first power supply voltage that enables high sensitivity. During write-back operations, the amplifier switches to a second power supply voltage that provides high withstand voltage capability, thus resolving the contradiction between sensitivity and voltage tolerance
Solution Approach 2:
The invention changes the power supply voltage parameter of the sense amplifier based on the operational stage. By transitioning between different power supply voltages (first power supply for sensing, second power supply for write-back), the system adapts the amplifier's characteristics to match the requirements of each operation mode, simultaneously achieving high sensitivity and high voltage tolerance
3Power
If the sense amplifier operates at high voltage for write-back, then write-back capability is improved, but the core device may be damaged due to exceeding withstand voltage range
Solution Approach 1:
The sense amplifier dynamically switches between different power supply voltages based on operational mode. During sensing operations, the amplifier operates at a first power supply voltage. During write-back operations, the amplifier switches to a second power supply voltage that is higher than the first, enabling high-voltage write-back capability while maintaining device safety through controlled voltage transitions
Solution Approach 2:
The invention changes the power supply voltage parameter of the sense amplifier based on the operational stage. By transitioning between different power supply voltages (first power supply for sensing, second power supply for write-back), the system adapts the amplifier's characteristics to match the requirements of each operation mode, simultaneously achieving high sensitivity and high voltage tolerance
Data Source
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AI summary
Embodiments of this application provide a memory, a control method for the memory, and an electronic device, and relate to the field of memory technologies, to resolve a problem that a sense amplifier in the memory cannot meet requirements of both high-sensitivity sensing and high-voltage write-back. The memory includes a sense amplifier, a first bit line, and a second bit line, and the sense amplifier includes a sense amplification circuit, a first switch circuit, and a second switch circuit. A first input terminal of the sense amplification circuit is connected to the first bit line, a second input terminal is connected to the second bit line, a first power supply terminal of the sense amplification circuit is connected to the first switch circuit, and a second power supply terminal is connected to the second switch circuit. The first switch circuit is configured to switch the first power supply terminal between conducting electricity with a first power supply and conducting electricity with a second power supply, where a voltage of the second power supply is greater than a voltage of the first power supply. The second switch circuit is configured to switch the second power supply terminal between conducting electricity with a third power supply and conducting electricity with a fourth power supply, where a voltage of the fourth power supply is greater than a voltage of the third power supply.