Sense Amplifier Shared Active Region Layout for Lower RC Delay
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Solution Overview
Problem
As integration density in semiconductor memory devices increases, the distance between active regions decreases, leading to increased RC delay and signal coupling issues, making it difficult to accurately transfer signals in conventional sense amplifiers.
Innovation Solution
The integration of junction regions of MOS transistors with the same conductivity type into a shared active region reduces the number of interconnections needed for signal transmission, allowing for signal transmission without separate interconnection connections and ensuring interconnection redundancy and contact margins.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased, then device capacity is improved, but RC delay increases and signal transfer accuracy deteriorates
Solution Approach 1:
The patent merges multiple active regions into a shared active region that is commonly used by multiple MOS transistors. This consolidation reduces the total number of separate active regions and interconnections, thereby reducing RC delay while maintaining high integration density. The shared active region approach allows signals to be transferred more efficiently without the cumulative delay of multiple separate paths.
Solution Approach 2:
The shared active region serves multiple functions and is commonly used by multiple MOS transistors simultaneously. This multi-functional design allows the same physical region to support multiple signal paths and transistor operations, reducing the need for dedicated separate regions and improving overall signal transfer efficiency while maintaining device capacity.
2Productivity
If distance between active regions is reduced, then integration density is improved, but RC delay increases
Solution Approach 1:
By merging multiple active regions into a single shared active region, the patent eliminates the need for signals to traverse multiple separate regions and their associated interconnections. This consolidation reduces the cumulative RC delay that would result from passing through multiple discrete active regions, while still achieving high integration density through the shared region approach.
3Adaptability or versatility
If number of metal interconnections is increased, then device functionality is improved, but coupling between adjacent interconnections increases
Solution Approach 1:
The patent reduces the total number of metal interconnections by consolidating multiple active regions into a shared active region. Fewer interconnections mean reduced capacitive coupling and interference between adjacent signal lines, while the shared region architecture maintains full device functionality through efficient resource sharing among multiple transistors.
4Reliability
If separate interconnection connections are used for each active region, then signal transmission reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple separate interconnection paths into a unified shared active region structure. This consolidation reduces device complexity by eliminating redundant interconnections while maintaining signal transmission reliability through the shared region's inherent electrical connectivity and reduced susceptibility to coupling interference.
Data Source
AI summary
A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.