Sense Amplifier Read Sequencing for Threshold Voltage Accuracy
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently reading and writing data due to the limitations in the sense amplifier module's ability to accurately determine threshold voltages of memory cell transistors, leading to inefficiencies in data storage and retrieval operations.
Innovation Solution
The semiconductor memory device incorporates a sense amplifier module with a first and second node configuration for capacitive coupling during read operations, allowing for the determination of data based on voltage changes in these nodes, enhancing the accuracy of data reading and writing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional sense amplifier module is used to read data from memory cell transistors, then the basic read function is achieved, but the accuracy of threshold voltage determination is insufficient leading to inefficiencies in data storage and retrieval operations
Solution Approach 1:
The sense amplifier module is divided into two distinct operational phases: a first sense period for initial threshold voltage determination and a second sense period for verification. This segmentation allows the system to perform multiple measurement cycles to improve accuracy while maintaining efficient data operations by separating the measurement process into manageable stages.
Solution Approach 2:
The first sense period performs a preliminary determination of the threshold voltage before the second sense period performs verification. This preliminary action enables the system to quickly assess the threshold voltage and only perform the full verification process when necessary, thereby improving both accuracy and efficiency.
2Measurement precision
If multiple sense operations are performed sequentially to improve measurement accuracy, then threshold voltage determination becomes more precise, but the operation time increases reducing productivity
Solution Approach 1:
The first and second sense periods are executed continuously without interruption or reset between them. The bit line voltage is continuously monitored through both periods, eliminating idle time and ensuring that the useful measurement action continues uninterrupted. This continuous operation minimizes the total time while achieving high measurement precision through multiple sampling points.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the efficiency and accuracy of data reading and writing by enabling precise determination of threshold voltages, thereby optimizing data storage and retrieval operations.
Implementation Method 1
a second node capacitively couplable with the first node; in a read operation of reading first data and second data continuously while applying a first voltage to a gate of the memory cell transistor, a voltage of the second node decreases with a decrease in a voltage of the first node by capacitive coupling between the first node and the second node
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a memory cell transistor; and a sense amplifier module, wherein: the sense amplifier module includes: a first node electrically couplable to a bit line; and a second node capacitively couplable with the first node; in a read operation of reading first data and second data continuously, a voltage of the second node decreases with a decrease in a voltage of the first node in a first period that is continuous to a second period; the sense amplifier module is configured to: determine the first data based on the voltage of the second node that is lowered in the first period; and determine the second data based on the voltage of the first node that is lowered in the second period.