Sense Amplifier Layout With Shared PMOS Well Region
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Solution Overview
Problem
The use of PMOS transistors in the data output unit of a sense amplifier in semiconductor memory devices increases the occupied region due to their characteristics, posing a challenge in maintaining a compact design.
Innovation Solution
A cross-coupled latch sense amplifier layout structure is implemented, where NMOS and PMOS latch transistors are positioned strategically to share a well region, with PMOS Yi transistors adjacent to the PMOS latch transistors and a local sense amplifier placed between the cell region and Yi transistors, ensuring the region occupied by the sense amplifier remains unchanged.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If PMOS transistors are used in the data output unit of the sense amplifier, then write time deterioration characteristics are improved, but the occupied region of the sense amplifier increases
Solution Approach 1:
The patent merges the well region of the Yi transistor with the well region of the PMOS latch transistor, allowing them to share a common well region. This consolidation eliminates the need for separate well regions, thereby preventing an increase in the occupied area while maintaining the use of PMOS transistors in the data output unit for improved write time characteristics
Solution Approach 2:
The shared well region serves multiple functions: it acts as the well region for both the Yi transistor and the PMOS latch transistor simultaneously. This multi-functional use of the well region allows the sense amplifier to maintain compact dimensions while supporting PMOS-based data output units that improve write time performance
Data Source
AI summary
A sense amplifier of a semiconductor device is disclosed. The sense amplifier of a semiconductor device may include a PMOS latch transistor and an NMOS latch transistor formed in a cross-coupled latch type, and may be configured to sense and amplify a signal of a pair of bit lines. The sense amplifier of a semiconductor device may include a Yi transistor configured to output a data signal amplified by the PMOS latch transistor and the NMOS latch transistor according to a column control signal, and may share a well region with the PMOS latch transistor.