Sense Amplifier Source Coupling for Memory Access Speed

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Solution Overview

Problem

Existing semiconductor memory technologies face inefficiencies in completing memory operations due to the time required to change voltages on signal lines during write and read operations, necessitating a reduction in voltage transition time to enhance operation speed.

Innovation Solution

The solution involves coupling multiple sense amplifier sections' RSLF sources together to provide increased discharge capacity, allowing active sense amplifier sections to utilize the additional capacity during memory access operations, thereby accelerating voltage changes on signal lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of time

If multiple sense amplifier sections share common RSLF sources, then discharge capacity is increased and memory access time is reduced, but device complexity increases due to coupled sources

Engineering Contradiction:
Improvememory access timeVSAvoiddevice complexity
Core Design Contradiction:
Loss of timeVSDevice complexity

Solution Approach 1:

The patent combines RSLF sources from multiple sense amplifier sections into shared common sources. Specifically, first RSLF sources from first sense amplifier sections are merged with second RSLF sources from second sense amplifier sections to form shared common first RSLF sources and shared common second RSLF sources. This merging increases discharge capacity while reducing memory access time, as the shared sources can serve multiple sense amplifier sections simultaneously.

Inventive Principle:
Principle #5Merging (Combining)

2Speed

If voltage transition time on signal lines is reduced, then memory operation completion time is decreased, but discharge capacity requirements increase

Engineering Contradiction:
Improvevoltage transition speedVSAvoiddischarge capacity
Core Design Contradiction:
SpeedVSPower

Solution Approach 1:

The patent merges RSLF sources from multiple sense amplifier sections to create shared common sources with increased discharge capacity. The shared common first RSLF sources and shared common second RSLF sources can provide the necessary discharge capacity to multiple sense amplifier sections, enabling faster voltage transitions on signal lines during read operations.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces memory access times by enhancing the discharge capacity, leading to faster completion of memory operations through shared RSLF sources and source circuits.

Implementation Method 1

A relatively high voltage on a signal line may be changed to a relatively low voltage by discharging the voltage, for example, to a reference voltage such as ground

Methodology Applied
Scientific EffectDischarge: Electrostatic Discharge

Data Source

PatentUS9390770B2Apparatuses and methods for accessing memory including sense amplifier sections and coupled sources
Publication Date: 2016.07.12 MICRON TECHNOLOGY INC
  • US9390770B2 patent drawing
  • US9390770B2 patent drawing
  • US9390770B2 patent drawing

AI summary

Apparatuses and methods for accessing memory are described. An example method includes accessing memory cells of a memory section, and sharing a source of an inactive sense amplifier section with an active sense amplifier section coupled to the memory cells of the memory section during a memory access operation to the memory section coupled to the active sense amplifier section. An example apparatus includes a memory section and a first sense amplifier section associated with the memory section. The first sense amplifier section includes a sense amplifier and includes a read/write circuit coupled to a first source associated with the first sense amplifier section. The source associated with the first sense amplifier section is coupled to a source associated with a second sense amplifier section. The second sense amplifier section is configured to be inactive during a memory access operation to the memory section.