Semiconductor Memory Sense Amplifier Tuning Window Alignment
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Solution Overview
Problem
The existing semiconductor devices with both SRAM and DRAM face challenges in achieving high stability and productivity due to manufacturing variations and lower control voltage, leading to defects in the sense amplifier of DRAM when the SRAM cell configuration is optimized for power saving.
Innovation Solution
A semiconductor device design that includes a first memory cell with more than seven transistors storing data in a latch circuit and a second memory cell storing data in a capacitor, with a sense amplifier having the same circuit configuration as the first memory cell, ensuring matching tuning windows for both SRAM and DRAM cells to improve manufacturing yield and power efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the SRAM cell configuration is changed to save electric power, then power efficiency is improved, but the sense amplifier of DRAM develops defects and manufacturing yield decreases
Solution Approach 1:
The patent applies universality by designing the sense amplifier with the same circuit configuration as the SRAM cell (both using latch circuits with more than seven transistors). This allows the sense amplifier to benefit from the low-voltage optimized design of the SRAM cell while maintaining its own functionality, thereby improving power efficiency without causing defects in the sense amplifier.
2Use of energy by moving object
If the SRAM cell configuration is changed to save electric power, then power efficiency is improved, but manufacturing yield decreases
Solution Approach 1:
The patent applies universality by making the sense amplifier circuit configuration identical to the SRAM cell configuration. This unified design allows both circuits to be manufactured under the same optimized conditions for low voltage operation, thereby improving power efficiency while maintaining high manufacturing yield through consistent fabrication processes.
Solution Approach 2:
The patent applies parameter changes by optimizing the transistor count and circuit configuration parameters for both SRAM cells and sense amplifiers. By using more than seven transistors in both configurations and matching their circuit designs, the patent achieves improved power efficiency while maintaining manufacturing yield through standardized design parameters.
3Use of energy by moving object
If lower control voltage is used for electric power saving, then power efficiency is improved, but operation stability gets worse
Solution Approach 1:
The patent applies universality by designing both the SRAM cell and sense amplifier with identical latch circuit configurations that are optimized for low-voltage operation. This unified design ensures that both circuits operate stably at lower control voltages, improving power efficiency while maintaining operation stability through consistent circuit behavior across different voltage conditions.
Solution Approach 2:
The patent applies parameter changes by optimizing the circuit configuration parameters (transistor count, connectivity, and arrangement) to achieve stable operation at lower control voltages. The latch circuit design with more than seven transistors is specifically optimized to maintain operation stability while reducing power consumption.
4Use of energy by moving object
If the SRAM cell configuration is changed, then power efficiency is improved, but the tuning window of SRAM does not correspond to the sense amplifier of DRAM
Solution Approach 1:
The patent applies universality by making the sense amplifier circuit configuration identical to the SRAM cell configuration. This ensures that both circuits have the same tuning window characteristics, allowing them to operate optimally under the same manufacturing conditions and voltage ranges, thereby improving power efficiency while maintaining tuning window compatibility.
Data Source
AI summary
A semiconductor device comprises a first memory cell comprising more than seven transistors and storing data in a latch circuit; and a second memory cell storing data in a capacitor; a sense amplifier having about the same circuit configuration of the first memory cell and detecting data stored in the second memory cell.