Semiconductor Memory Sense Amplifier Pre-Charge Circuit
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Solution Overview
Problem
The increased integration of semiconductor devices leads to finer linewidths in signal transfer lines, resulting in increased parasitic resistance and capacitor size, which decreases the performance of semiconductor memory devices, particularly in sense-amplifying data from bit lines due to the need for more signal transfer lines.
Innovation Solution
A data sense amplifier circuit that minimizes the number of signal transfer lines by using a pre-charging unit to generate a sense amplifying pre-charge voltage through voltage division of the power source and ground voltages, applied to both the power source and ground lines, allowing for efficient sense-amplification and equalization of bit lines without an external pre-charge voltage source.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the number of signal transfer lines is increased to improve sense-amplifying performance, then the sense-amplifying performance is improved, but the linewidth becomes finer and parasitic resistance increases
Solution Approach 1:
The pre-charging unit pre-charges the power source line and ground line before the sense amplifying operation to equalize their voltage levels. This preliminary equalization action eliminates voltage imbalances that would otherwise cause parasitic resistance issues during sense amplifying, allowing reliable operation without requiring additional signal transfer lines.
Solution Approach 2:
The pre-charging unit uses the existing power source line and ground line to generate the pre-charge voltage through voltage division, rather than requiring an external pre-charge voltage source. This self-service approach eliminates the need for additional dedicated pre-charge signal lines, maintaining sense-amplifying performance while avoiding the parasitic resistance problems associated with finer linewidths.
2Reliability
If more signal transfer lines are used to transfer power and control signals, then the sense-amplifying function is improved, but the overall device complexity increases
Solution Approach 1:
The power source line and ground line serve multiple functions: they provide power/ground voltage to the sense amplifier and simultaneously serve as the voltage dividing path for generating the pre-charge voltage. This multi-functionality eliminates the need for separate dedicated pre-charge signal lines, reducing device complexity while maintaining sense amplifying performance.
Solution Approach 2:
The invention merges the pre-charge voltage generation function into the existing power source and ground lines by creating a voltage dividing path between them. This consolidation combines multiple functions (power delivery, ground reference, and pre-charge voltage generation) into the same physical structures, reducing the total number of signal transfer lines required.
3Reliability
If an independent pre-charge voltage generation structure is added, then the pre-charge function is improved, but the device complexity and number of signal lines increase
Solution Approach 1:
The pre-charging unit generates the pre-charge voltage using only the existing power source line and ground line through voltage division, without requiring an external or independent pre-charge voltage source. This self-service approach provides reliable pre-charge functionality while avoiding the device complexity and additional signal lines that would result from an independent voltage generation structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of power source lines required, allowing for wider linewidths and improved performance in sense-amplifying data, while eliminating the need for an independent pre-charge voltage generation structure, thereby enhancing overall operation performance.
Implementation Method 1
generate the sense amplifying pre-charge voltage by voltage dividing the sense amplifying power source voltage and the sense amplifying ground voltage through a voltage dividing path including the sense amplifying power source line and the sense amplifying ground line
Data Source
AI summary
A memory device includes a data line sense amplifier configured to receive a sense amplifying power source voltage and a sense amplifying ground voltage through a sense amplifying power source line and a sense amplifying ground line, respectively, and sense-amplify data loaded on a pair of data lines, and a pre-charging unit configured to pre-charge and equalize the sense amplifying power source line and the sense amplifying ground line with a sense amplifying pre-charge voltage, generate the sense amplifying pre-charge voltage by voltage dividing the sense amplifying power source voltage and the sense amplifying ground voltage through a voltage dividing path including the sense amplifying power source line and the sense amplifying ground line, and apply the sense amplifying power source voltage to the sense amplifying power source line and the sense amplifying ground voltage to the sense amplifying ground line in response to a sense amplifying pre-charge control signal.