Semiconductor Sense Gate Trench for Field Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices, there is a challenge in reducing electric field concentration, particularly in the active region where the main transistor and sense transistor sections are located, which can lead to voltage fluctuations and inefficiencies.
Innovation Solution
The semiconductor device incorporates a sense transistor section with a sense gate trench section extending from the outer region to the main well region on the semiconductor substrate, allowing it to follow voltage fluctuations and reduce electric field concentration by being electrically connected to the main gate trench section, thereby maintaining synchronization with the main transistor section.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a sense transistor section is provided outside the active region to detect current, then measurement capability is improved, but electric field concentration occurs between the main and sense transistor sections
Solution Approach 1:
A potential equalization trench is introduced as an intermediary structure between the main transistor section and sense transistor section. This trench, filled with conductive material, acts as a mediator to equalize potentials and eliminate harmful electric field concentration, allowing the sense transistor to function without being affected by the main transistor's electric field.
Solution Approach 2:
The semiconductor device is segmented into distinct regions: an active region containing the main transistor, an inactive region containing the sense transistor, and a potential equalization trench separating them. This segmentation isolates the sense transistor from harmful electric fields while maintaining its measurement function.
2Adaptability or versatility
If the sense transistor section is placed outside the active region, then it can detect current without interfering with main transistor operation, but voltage fluctuations occur affecting synchronization
Solution Approach 1:
The potential equalization trench creates an equipotential region between the active and inactive regions. By filling the trench with conductive material and connecting it to appropriate potentials, the structure ensures that both the main transistor section and sense transistor section operate at stable, synchronized potentials, eliminating voltage fluctuations while maintaining independent detection capability.
3Reliability
If electric field concentration is reduced through structural modifications, then voltage stability is improved, but device complexity increases
Solution Approach 1:
The potential equalization trench serves multiple functions simultaneously: it acts as a barrier to electric field concentration, provides potential equalization between regions, and can be integrated with existing transistor structures. This multi-functionality achieves voltage stability without proportionally increasing device complexity.
Data Source
AI summary
In order to reduce electric field concentration in a semiconductor device including a main transistor section and a sense transistor section, the semiconductor device is provided, the semiconductor device including a semiconductor substrate of a first conductivity type, a main transistor section in an active region on the semiconductor substrate, and a sense transistor section outside the active region on the semiconductor substrate, wherein the active region is provided with a main well region of a second conductivity type, and wherein the sense transistor section has a sense gate trench section formed extending from the outside of the active region to the main well region on the front surface of the semiconductor substrate.