Sensing Circuit Detecting High Impedance Leakage

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Solution Overview

Problem

Existing sensing circuits fail to detect leakage current paths with high impedance characteristics in non-volatile memories, leading to undetected defects that cause product failures during low-voltage operation, resulting in reduced reliability and yield.

Innovation Solution

A sensing circuit with a switch group and test controller that operates in multiple test modes to detect high impedance leakage current paths by adjusting the conduction path based on control signals, allowing for accurate identification and correction of sensing results.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional sensing circuit is used to detect leakage current paths, then low impedance leakage paths can be detected, but high impedance leakage paths cannot be detected

Engineering Contradiction:
Improvedetection capabilityVSAvoidproduct reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The sensing circuit dynamically switches between two test modes using a switch group. In the first test mode, the circuit detects low impedance leakage paths using conventional sensing. In the second test mode, the circuit configuration changes to detect high impedance leakage paths. This dynamic reconfiguration allows the same circuit to adapt to different detection requirements, resolving the contradiction between detecting low impedance paths and detecting high impedance paths.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the operational parameters of the sensing circuit by switching between different test modes. By modifying the circuit configuration through the switch group, the sensing circuit can adjust its impedance detection range. This parameter change enables the circuit to detect both low impedance and high impedance leakage paths that would otherwise be undetectable in a single fixed configuration.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the sensing circuit operates in a single test mode, then the circuit structure remains simple, but it cannot detect both low impedance and high impedance leakage paths

Engineering Contradiction:
Improvedetection coverageVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The sensing circuit is designed with multi-functionality by incorporating a switch group that enables two different test modes within a single circuit structure. The same sensing circuit can perform both low impedance leakage detection (first test mode) and high impedance leakage detection (second test mode). This universal design allows one circuit to fulfill multiple detection functions, expanding detection coverage without requiring completely separate circuits for each mode.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The circuit uses dynamic switching between test modes to achieve multiple functions. The switch group allows the circuit to reconfigure itself based on the detection requirements, transitioning between detecting low impedance paths and high impedance paths. This dynamic capability enables a single circuit structure to provide comprehensive leakage detection coverage that would otherwise require multiple dedicated circuits.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11450402B1Sensing circuit and test device
Publication Date: 2022.09.20 POWERCHIP SEMICON MFG CORP
  • US11450402B1 patent drawing
  • US11450402B1 patent drawing
  • US11450402B1 patent drawing

AI summary

A sensing circuit is provided which generates a sensing result according to a reading voltage of a non-volatile memory. The sensing circuit includes four transistors and a switch group. A first transistor is coupled between an operating voltage and a first node. A second transistor is coupled between the first node and a second node. A third transistor is coupled between the second node and a reference ground voltage. A control terminal of the first transistor, a control terminal of the second transistor, and a control terminal of the third transistor all receive the reading voltage. A fourth transistor is coupled between the operating voltage and the first node. The switch group forms or disconnects a conduction path between a control terminal of the fourth transistor and the second node according to a control signal, so that the first node obtains the sensing result.