Semiconductor Pressure Sensor Aperture Offset Design
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Solution Overview
Problem
Conventional semiconductor pressure sensors experience reduced breakage pressure tolerance due to discontinuous residual stresses at the edge portions of the penetrating aperture, which are superimposed on stresses in the diaphragm when pressure is applied, leading to potential diaphragm breakage.
Innovation Solution
The semiconductor pressure sensor design positions at least a portion of the edge portion of the penetrating aperture inside the opening edge portion of the recess portion, separating the stresses and reducing their superposition on the diaphragm, thereby enhancing the breakage pressure tolerance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the positions of the opening edge portions of the recess portion and the positions of the edge portions of the penetrating aperture are aligned, then the manufacturing process is simplified, but the breakage pressure tolerance of the diaphragm is significantly reduced due to stress superposition
Solution Approach 1:
The patent segments the aperture structure into two distinct components: the recess portion in the first substrate and the penetrating aperture in the oxide film. By separating their edge positions, the stress concentration zones are divided and no longer superimposed, thereby improving diaphragm strength while maintaining manufacturing feasibility through controlled offset positioning.
Solution Approach 2:
The patent applies local quality by creating a non-uniform spatial relationship between the recess portion and penetrating aperture edges. Specifically, the edge portions are deliberately positioned at different locations rather than being uniformly aligned, which locally redistributes stress patterns and prevents stress superposition at critical diaphragm regions.
2Strength
If the edge portion of the penetrating aperture is positioned inside the opening edge portion of the recess portion, then stress superposition is avoided and breakage pressure tolerance is improved, but the joining surface area and airtightness may be compromised
Solution Approach 1:
The patent applies partial action by positioning only a portion of the penetrating aperture edge inside the recess opening edge, rather than completely offsetting all edges. This partial offsetting is sufficient to avoid stress superposition at critical regions while maintaining adequate joining surface area and airtightness between the substrates.
Solution Approach 2:
The patent changes the spatial parameter (position) of the penetrating aperture relative to the recess portion. By adjusting the offset distance and positioning relationship between these features, the patent optimizes the balance between stress distribution (improving strength) and maintaining sufficient sealing surface area (preserving airtightness).
Data Source
AI summary
A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided.Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.