Image Sensor Electrode Structure for Parasitic Capacitance Compensation
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Solution Overview
Problem
Conventional image sensing apparatuses suffer from reduced image quality due to parasitic capacitors affecting the edges of the sensing images, leading to unwanted black rings and decreased resolution.
Innovation Solution
The implementation of a first electrode structure adjacent to the sensor array, which receives a compensation signal to mitigate the effect of parasitic capacitors, improving image quality by acting as a compensation capacitor to cancel out parasitic capacitance between sensing cells and the reference ground.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the sensor array is disposed close to the sealing and scribe line to save space, then the device area is reduced, but parasitic capacitor effect increases causing image quality degradation
Solution Approach 1:
The patent introduces an electrode structure as an intermediary element disposed between the sensor array and the sealing/scribe line. This electrode structure receives a compensation signal that generates an electric field to counteract the parasitic capacitor effect, thereby mediating the harmful interaction while allowing the sensor array to remain close to the sealing for space efficiency.
Solution Approach 2:
The patent applies preliminary anti-action by introducing a compensation signal to the electrode structure before the parasitic capacitor effect fully degrades the sensing signal. The compensation signal is configured to preemptively counteract the parasitic capacitance, preventing image quality degradation before it occurs.
2Device complexity
If the sensor array edge is close to the sealing structure, then manufacturing complexity is reduced, but image quality deteriorates due to black ring effect
Solution Approach 1:
The electrode structure serves as an intermediary that eliminates the need for complex shielding structures or increased spacing between the sensor array and sealing. By using a simple electrode structure with compensation signal input, the patent maintains manufacturing simplicity while achieving improved image quality without the black ring effect.
Solution Approach 2:
The patent changes the electrical parameter by introducing a compensation signal with specific voltage and frequency characteristics to the electrode structure. This parameter change creates an electric field that counteracts the parasitic capacitor effect, improving image quality without requiring structural modifications that would increase manufacturing complexity.
3Device complexity
If no compensation mechanism is added to maintain simple structure, then device complexity remains low, but sensing precision decreases due to parasitic capacitor
Solution Approach 1:
The electrode structure with compensation signal input acts as a minimal intermediary addition that significantly improves sensing precision. Rather than implementing complex active compensation circuits or sophisticated signal processing systems, the patent uses a simple electrode structure that requires only a compensation signal source, maintaining low device complexity while achieving high sensing precision.
Solution Approach 2:
The compensation signal provided to the electrode structure functions as a feedback mechanism that counteracts the parasitic capacitor effect. By monitoring the sensing operation and providing appropriate compensation signals, the system maintains high sensing precision without requiring complex real-time adjustment mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the impact of parasitic capacitors, enhancing the quality of the sensing images by injecting compensation charges back to the sensing cells, thereby improving resolution and eliminating unwanted edge effects.
Implementation Method 1
there is a parasitic capacitor CGND formed between an edge of the sensor array 110 and the sealing SEAR and the scribe line SCL
Implementation Method 2
the first electrode structure is configured to receive a first compensation signal when a sensing operation is operating on a first plurality of sensing cells among the sensing cells of the sensor array
Data Source
AI summary
An mage sensing apparatus includes a substrate, a sensor array and a first electrode structure. The sensor array has a plurality of sensing cells and is disposed on the substrate. The first electrode structure is disposed on the substrate, and is adjacent to a first side of the sensor array and extending along the first side of the sensor array. wherein, the first electrode structure is configured to receive a first compensation signal when a sensing operation is operating on a first plurality of sensing cells among the sensing cells of the sensor array.