Series Sub-Emission Layers for Short-Defect-Resistant Displays
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Solution Overview
Problem
Display devices face malfunctions due to defects in light emitting elements, particularly issues with short defects in emission layers that hinder light emission.
Innovation Solution
The display device incorporates a light emitting element with a series connection of sub-emission layers and a quantum-dot layer, where the sub-emission layers are electrically connected in series between electrodes, and a quantum-dot layer is used for color conversion, enhancing light emission reliability by reducing the risk of malfunction even with defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single emission layer is used in the light emitting element, then the device structure is simple, but the reliability of light emission is poor due to short defects
Solution Approach 1:
The emission layer is divided into multiple sub-emission layers (first sub-emission layer and second sub-emission layer) connected in series. Each sub-emission layer contains N-type semiconductor layer, P-type semiconductor layer, and active layer. This segmentation allows the system to maintain light emission functionality even if one sub-emission layer develops a short defect, as the other sub-emission layers can still operate independently.
2Illumination intensity
If quantum-dot layer is added for color conversion, then the color performance is improved, but the device complexity increases
Solution Approach 1:
The quantum-dot layer serves multiple functions: it converts the wavelength of light emitted by the sub-emission layers to achieve precise color control, and it can be integrated with the existing multi-layer structure without requiring separate color conversion systems. This multi-functional approach improves color performance while minimizing additional complexity.
3Reliability
If series connection of sub-emission layers is implemented, then the risk of malfunction is reduced, but the manufacturing complexity increases
Solution Approach 1:
The emission layer is segmented into multiple independently manufacturable sub-emission layers that can be fabricated separately and then assembled in series connection. Each sub-emission layer can be produced using standard semiconductor fabrication processes, and the series connection is achieved through proper electrode arrangement, allowing modular manufacturing that balances reliability improvement with manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces the risk of light emitting element malfunction and improves light emission reliability by ensuring that even if one sub-emission layer is defective, others can still emit light, maintaining display performance.
Implementation Method 1
a light emitting element including a first electrode, a second electrode, and an emission layer electrically connected to the first electrode through a first contact portion and electrically connected to the second electrode through a second contact portion
Implementation Method 2
a quantum-dot layer on the emission layer. Light emitted by the emission layer may pass through the quantum-dot layer
Data Source
AI summary
A display device and a method of manufacturing the same. The display device includes: a pixel circuit layer and a light emitting element on the pixel circuit layer. The light emitting element includes first and second electrodes and an emission layer electrically connected to the first electrode through a first contact portion and electrically connected to the second electrode through a second contact portion. The emission layer includes: a first sub-emission layer including a first N-type semiconductor layer, a first P-type semiconductor layer, and a first active layer between the first N-type semiconductor layer and the first P-type semiconductor layer; and a second sub-emission layer including a second N-type semiconductor layer, a second P-type semiconductor layer, and a second active layer between the second N-type semiconductor layer and the second P-type semiconductor layer. The first and second sub-emission layers are electrically connected in series between the first and second electrodes.