Shaped Beam Lithography Shot Segmentation for Pattern Precision
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Solution Overview
Problem
The existing methods for forming complex patterns on reticles and substrates using charged particle beam lithography are time-consuming and costly due to the need for multiple shots and complex OPC features, which increase the total feature count and computational labor in optical lithography.
Innovation Solution
A method and system that utilize a plurality of circular or nearly-circular shaped beam shots in a shaped beam charged particle beam writer system to form non-circular patterns on surfaces, allowing for the creation of continuous tracks using a series of curvilinear character projection shots, reducing the number of shots required and improving efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple shots and complex OPC features are used to form complex patterns on reticles and substrates using charged particle beam lithography, then the pattern formation precision is improved, but the time and cost increase
Solution Approach 1:
The complex pattern formation process is segmented into multiple passes, where the first pass writes non-critical patterns and the second pass writes critical patterns. This segmentation allows optimization of each pass independently, reducing the total number of shots required while maintaining pattern formation precision.
Solution Approach 2:
The first pass performs preliminary writing of non-critical patterns before the second pass writes the critical patterns. This preliminary action prepares the substrate in advance, allowing the second pass to focus only on the most important features, thereby reducing overall processing time and cost.
2Productivity
If the number of shots is reduced to decrease time and cost, then productivity is improved, but the complexity of forming accurate curvilinear patterns increases
Solution Approach 1:
The method extracts and separates the writing of critical and non-critical patterns into different passes. By taking out the non-critical pattern writing in the first pass, the second pass can focus exclusively on critical patterns with fewer shots, reducing overall complexity while maintaining accuracy.
Solution Approach 2:
The system dynamically adjusts the writing strategy by identifying and prioritizing critical patterns for the second pass while handling non-critical patterns in the first pass. This dynamic approach optimizes the balance between productivity and pattern formation complexity.
3Measurement precision
If conventional optical lithography with multiple OPC features is used, then pattern accuracy is maintained, but the total feature count and computational labor increase
Solution Approach 1:
The lithography process is segmented into two passes, with each pass handling specific patterns based on their criticality. This segmentation reduces the total feature count that needs to be processed through complex OPC, while maintaining pattern accuracy through targeted writing in the second pass.
Solution Approach 2:
Non-critical patterns are written in advance in the first pass, performing a preliminary action that removes them from the set of patterns requiring complex OPC processing in the second pass. This reduces computational labor and total feature count while maintaining the accuracy of critical patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the time and cost associated with forming complex patterns by minimizing the number of shots needed, enhancing the speed and accuracy of pattern formation on reticles and substrates while maintaining the required precision and complexity of curvilinear patterns.
Implementation Method 1
a precise electron beam is shaped and steered so as to expose a resist-coated surface
Implementation Method 2
ion-implantation (doping)
Data Source
AI summary
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of circular or nearly-circular shaped beam shots can form a non-circular pattern on a surface. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming non-circular patterns on a surface using a plurality of circular or nearly-circular shaped beam shots is also disclosed.