Shared Column Select Line for Memory IO Breaks

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Solution Overview

Problem

The inefficiencies in manufacturing, function, and space utilization in memory devices arise from the use of dummy circuitry at input/output (IO) breaks between column select sections, which can be improved by utilizing a shared column select line instead of dummy circuitry.

Innovation Solution

Implementing a shared column select line at IO breaks between column planes to access memory cells from both planes, which also serves as a redundant column select line for fault tolerance, thereby enhancing manufacturing efficiency, space utilization, and repair capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If dummy circuitry is used at IO breaks between column select sections, then manufacturing and layout are simplified, but manufacturing efficiency, space utilization, and function are reduced

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoidmanufacturing efficiency

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

The column select line at the IO break is designed to serve multiple functions: it acts as a shared column select line for both adjacent column planes and simultaneously serves as a redundant column select line for fault tolerance. This multi-functionality eliminates the need for separate dummy circuitry while improving manufacturing efficiency and space utilization.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the previously separate functions of the column select line at the IO break into a unified structure that combines sharing between column planes and providing redundancy. By merging these functions into a single circuit element, the design eliminates wasted space and improves manufacturing efficiency without sacrificing ease of manufacture.

Inventive Principle:

Principle #5Merging (Combining)

2Ease of manufacture

If dummy circuitry is used at IO breaks between column select sections, then layout is simplified, but space utilization is reduced

Engineering Contradiction:

Improvelayout simplicityVSAvoidspace utilization

Core Design Contradiction:

Ease of manufactureVSArea of stationary object

Solution Approach 1:

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Device complexity

If dummy circuitry is used at IO breaks between column select sections, then circuitry structure is simplified, but repair capabilities are reduced

Engineering Contradiction:

Improvecircuitry structureVSAvoidrepair capabilities

Core Design Contradiction:

Device complexityVSEase of repair

Solution Approach 1:

The column select line at the IO break is designed to serve as a redundant column select line in advance, providing fault tolerance before failures occur. This beforehand cushioning ensures that if a column select line fails, the redundant line can take over, maintaining device functionality and improving repair capabilities.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

Inventive Principle:

Principle #6Universality (Multi-functionality)

4Adaptability or versatility

If separate column select lines are used for each column plane, then column plane independence is maintained, but manufacturing efficiency and space utilization are reduced

Engineering Contradiction:

Improvecolumn plane independenceVSAvoidmanufacturing efficiency

Core Design Contradiction:

Adaptability or versatilityVSProductivity

Solution Approach 1:

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS11581035B2Systems, devices, and methods for efficient usage of IO section breaks in memory devices

Publication Date: 2023.02.14 MICRON TECHNOLOGY INC

AI summary

A memory device may include a memory array having a plurality of memory cells and a first column plane having multiple column select lines. The first column select lines of the first column plane may access a first set of the memory cells associated with the first column plane. Additionally, the memory device may include a second column plane having a multiple column select lines to access a second set of the memory cells associated with the second column plane. The memory device may also include a column select line shared between the first column plane and the second column plane. The column select line may access a third set of the memory cells associated with the first column plane and a fourth set of the memory cells associated with the second column plane.