Solid-State Image Sensor Electrode Layout for Charge Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing solid-state image sensors face issues with charge movement and transfer between adjacent imaging elements, leading to potential picture quality degradation due to varying light incidence angles and charge accumulation inefficiencies.
Innovation Solution
The proposed solid-state image sensor configuration includes imaging element blocks with a first electrode, a charge accumulating electrode, and a photoelectric conversion portion, where the first electrode is connected to a connection portion in the interlayer insulating layer, and the imaging elements are arranged with shared first electrodes and isolation electrodes to ensure consistent charge transfer and reduce interference between adjacent elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If charge is accumulated in the photoelectric conversion portion, then photoelectric conversion efficiency is improved, but charge may move to adjacent imaging elements causing picture quality degradation
Solution Approach 1:
The patent divides the charge accumulation function into two separate components: the photoelectric conversion portion and the charge accumulating electrode. This segmentation allows charge to be efficiently accumulated in the photoelectric conversion portion while the charge accumulating electrode provides a dedicated collection point that prevents charge leakage to adjacent elements, thus resolving the contradiction between accumulation efficiency and transfer accuracy.
Solution Approach 2:
The first electrode serves as an intermediary component between the photoelectric conversion portion and the charge accumulating electrode. It facilitates controlled charge transfer from the photoelectric conversion portion to the charge accumulating electrode, ensuring that charge is reliably collected without leaking to adjacent imaging elements, thereby maintaining both accumulation efficiency and transfer accuracy.
2Area of stationary object
If imaging elements are arranged closely to increase pixel density, then device integration is improved, but charge transfer consistency deteriorates due to varying light incidence angles
Solution Approach 1:
The patent introduces a vertical dimension to charge accumulation by positioning the charge accumulating electrode below the photoelectric conversion portion. This three-dimensional arrangement allows charge to be collected vertically rather than laterally, which maintains charge transfer consistency even when imaging elements are closely arranged horizontally, thus resolving the contradiction between pixel density and charge transfer consistency.
Solution Approach 2:
The patent applies different functional properties to different parts of the imaging element structure. The photoelectric conversion portion is optimized for light absorption and charge generation, while the charge accumulating electrode is optimized for charge collection and storage. This local differentiation ensures that each component performs its function optimally, maintaining charge transfer consistency across closely arranged elements with varying light incidence angles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures consistent charge movement and transfer, enhancing the image quality by preventing charge leakage and improving the reliability of charge accumulation and transfer processes, thereby maintaining image integrity across different light angles.
Implementation Method 1
An imaging element in which an organic semiconductor material is used for a photoelectric conversion layer can perform photoelectric conversion of a specific color (wavelength band).
Data Source
AI summary
A solid-state image sensor includes a plurality of imaging element blocks each configured from a plurality of imaging elements. Each of the imaging elements includes a first electrode, a charge accumulating electrode arranged in a spaced relation from the first electrode, a photoelectric conversion portion contacting with the first electrode and formed above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion portion. The first electrode and the charge accumulating electrode are provided on an interlayer insulating layer, and the first electrode is connected to a connection portion provided in the interlayer insulating layer.