Solid-State Devices TRIZ Cases

Small RGB LED chips are combined in a larger coupled package to keep high current density while improving display mounting and repair yield.

Separating N-type and P-type charge generation layers improves energy level balance and keeps OLED emission stable at high temperature.

Thermal oxidation after CMP forms a polysilicon oxide layer that enables full nitride removal and reduces liner oxide grooves in deep trench IC fabrication.

A GeSi and silicon photodiode array boosts near-infrared absorption, sensitivity, and depth resolution for time-of-flight imaging.

Overlapping full-depth and partial-depth isolation grooves improve photoelectric conversion sensitivity while suppressing noise, color mixing, and dark current.

Heterogeneous channel and barrier materials improve deposition in high-aspect-ratio memory openings while boosting density, mobility, and leakage control.

Tapered isolation extensions let microlenses overlap without crossing barriers, reducing light loss while preserving pixel isolation.

Rounded trench sidewalls from Bosch etching preserve insulating film thickness, raising breakdown voltage without sacrificing capacitance density.

A recessed laminated capacitor beneath the semiconductor film boosts pixel capacitance while preserving aperture and shielding transistor regions from light.

A reflective cup, lens, and remote protection and detection chips improve UV-C light output while monitoring radiation decay for disinfection.

Alternating LED regions with masked epitaxy create blue and green emission on one substrate, improving backlight color gamut with lower phosphor cost.

Deep sub-micron silicon recombination regions and surface passivation enable low-voltage light emission with far higher output per area.

Alternating offset-stacked chips create exposed cooling surfaces and via paths that improve heat dissipation and package reliability.

A backside metal grid aligned to trench isolation blocks light leakage between photodiodes, improving dynamic range and color contrast.

An insulating pattern layer shields the light emitting layer during etching, reducing surface defects and leakage currents to improve emission efficiency.

A particle layer creates a granular rough reflective region that boosts diffuse reflection, widens viewing angles, and cuts glare outdoors.

Perpendicular N/P well regions isolate adjacent memory cells, blocking charge propagation and reducing plural-bit soft errors without larger cells.

A composite insulating film with a high-modulus elastic member guides even crack propagation, flattening cut surfaces and improving electrode contact.

Using unaligned wafer crystal orientations, this case packs angled transistors more densely while avoiding lattice mismatch and preserving memory performance.

Embedded transistors and trench-isolated LED regions enable monolithic pixel control with lower processing cost and reduced edge losses.

Splitting row-line transfer circuits across memory and circuit chips cuts pass transistors per stack, shrinking 3D memory footprint and supporting faster operation.

Selective LED heating cures adhesive only at aligned phosphor pixels, enabling dense multicolor arrays without serial pick-and-place.

An oxide semiconductor TFT with a lower electrode and half-tone mask patterning cuts process steps while improving mobility and reliability.

A higher-bandgap dielectric barrier and low lattice mismatch keep perovskite capacitor crystallinity stable while suppressing leakage.

A multi-trench integrated passive device improves package power distribution by placing compact capacitors closer to the die and reducing voltage droop.

Opposing-stress protection patterns and encapsulation help OLED pixels prevent color mixing and improve durability across the display.

A hole-patterned blocking layer and aligned voids suppress dislocations and cracks from lattice mismatch in nitride light emitters.

A dual-IMD and removable cap-layer layout helps dense MRAM cells cut RC delay and crosstalk around the MTJ structure.

A ring-shaped peripheral conductor layout improves common electrode flatness, etching uniformity, and signal consistency in dense micro-display substrates.

A localized fluorescent layer above each LED absorbs excess blue light, improves quantum dot excitation, and removes bluish backlight spots.

Differently sized RGB micro-LEDs use shape-matched fluidic self-assembly to improve alignment, yield, color representation, and energy efficiency.

Curved concave inner-bank sidewalls reflect and concentrate emitted light, improving luminous efficiency without excessive display structure complexity.

Synchronized reset and dual-signal row readout suppress noise variation in photoelectric conversion pixels while preserving focus detection.

An inorganic layer and spaced color filter patterns improve seal adhesion in the non-display area, blocking air and moisture ingress.

Varying subpixel bank sizes balances current density across light emitting areas, reducing heat damage and extending element life.

Separating voltage supply lines from data lines in the array substrate enables wider power routing, lower IR drop, and stronger pixel current drive.

DBI logic extended through TSV paths to memory cores cuts HBM power use, voltage droop, and simultaneous switching noise.

A porous lift-off layer and sidewall passivation protect semiconductor LEDs during substrate separation while improving light extraction.

Vertically stacked red, green, and blue LEDs with Bragg reflectors enable fine-pitch displays with lower color crosstalk and better color accuracy.

Shared first electrodes and isolation electrodes guide charge transfer between dense imaging elements, limiting leakage and preserving image quality.

Varying top AlN barrier thickness tunes p-channel TFT threshold voltage and cuts off-state leakage in printed thin-film electronics.

Simultaneous hole formation and groove etching keep semiconductor memory holes straight and uniform, easing high-aspect-ratio processing.

A six-sided or larger connection pattern preserves clearance between display lines, preventing short-circuit defects in high-resolution pixels.

Grooved pixel-defining layers let one nozzle pass feed multiple subpixels, improving high-PPI inkjet uniformity and printing accuracy.

A sidewall light-shielding film blocks display light from reaching the camera, improving under-screen image quality without enlarging the opening.

A protruding inter-pixel isolation structure raises signal charge in back-illuminated CMOS sensors while suppressing color mixture and improving light confinement.

A backside interposer shifts a controller die nearer the exterior surface, improving heat dissipation while preserving a thin package and uniform BGA contacts.

By placing the power supply and receiving card inside the module around the circuit board, this case cuts LED display thickness while aiding heat dissipation.

Alternating inorganic films around display-panel holes block moisture and oxygen, improving OLED reliability and service life.

Driven light-emitting elements harden photosensitive resin into color-converting layers, improving luminance and color purity without extra exposure.