Shared-Pixel Image Sensor Layout for Visible and IR Detection
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Solution Overview
Problem
Current image sensors face challenges in enhancing light sensitivity and quantum efficiency for both visible and infrared light detection, particularly in designing structures and materials that allow for efficient image capture across various wavelength ranges.
Innovation Solution
The image sensor incorporates a semiconductor substrate with both visible and infrared light detection structures within the same pixel region, utilizing a reflective layer and isolation structures to optimize light sensitivity and quantum efficiency, with the visible light detection structure overlapping the infrared light detection structure to improve photoelectric conversion performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If both visible light detection structure and infrared light detection structure are disposed within the same pixel region, then light sensitivity and quantum efficiency are improved, but device complexity increases
Solution Approach 1:
The patent combines visible light detection structure and infrared light detection structure within the same pixel region, allowing both detection functions to coexist and work simultaneously in a shared space, thereby improving light sensitivity and quantum efficiency while managing device complexity through integrated design
Solution Approach 2:
The visible light detection structure is positioned to overlap with the infrared light detection structure in a nested arrangement, where the first portion is disposed between the infrared light detection structure and the second surface, and the second portion is disposed between the infrared light detection structure and the first isolation structure, enabling efficient space utilization
2Reliability
If visible light detection structure overlaps infrared light detection structure, then photoelectric conversion performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The visible light detection structure is divided into a first portion and a second portion, with the first portion disposed between the infrared light detection structure and the second surface of the semiconductor substrate, and the second portion disposed between the infrared light detection structure and the first isolation structure, allowing segmented optimization of alignment and manufacturing
Solution Approach 2:
The patent utilizes vertical layering and horizontal positioning to create a three-dimensional arrangement where the visible light detection structure overlaps the infrared light detection structure in both vertical and horizontal dimensions, improving photoelectric conversion while distributing alignment requirements across multiple spatial dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the light sensitivity and quantum efficiency of the image sensor, allowing for improved image capture and resolution, particularly in applications requiring both visible and infrared light detection.
Implementation Method 1
The reflective layer is disposed on the first surface of the semiconductor substrate. The infrared light detection structure is disposed between the reflective layer and the first portion of the visible light detection structure in the vertical direction
Implementation Method 2
a visible light detection structure and an infrared light detection structure are disposed within the same pixel region for improving light sensitivity, quantum efficiency, and other related properties of the image sensor
Data Source
AI summary
An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface in a vertical direction, a first isolation structure disposed in the semiconductor substrate for defining pixel regions, a visible light detection structure, an infrared light detection structure, and a reflective layer. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region. The visible light detection structure includes a first portion disposed between the second surface and the infrared light detection structure in the vertical direction and a second portion disposed between the infrared light detection structure and the first isolation structure in a horizontal direction. The infrared light detection structure is disposed between the reflective layer and the first portion in the vertical direction. The second portion is not sandwiched between the reflective layer and the second surface in the vertical direction.